Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAM's and decoupling capacitors

Sandwip Dey, Jong Jan Lee

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76 Citations (Scopus)

Abstract

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors.

Original languageEnglish (US)
Pages (from-to)1607-1613
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume39
Issue number7
DOIs
StatePublished - Jul 1992

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Dynamic random access storage
decoupling
Perovskite
pulse charging
capacitors
Capacitors
Permittivity
permittivity
Thin films
Voltage measurement
Electric current measurement
towers
thin films
tangents
Leakage currents
Towers
electrical measurement
Sol-gels
charging
leakage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAM's and decoupling capacitors",
abstract = "Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol{\%} La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors.",
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N2 - Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors.

AB - Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors.

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