@inproceedings{1fe7d662ea4f469493388d7aabf16d9d,
title = "Cu migration in polycrystalline CdTe solar cells",
abstract = "An impurity diffusion-reaction model is applied to Cu migration in CdTe layer of CdTe solar cells. In this simulation, the reactions between major defects, such as Cu interstitials, Cd interstitials, Cd vacancies and Cu at Cd site, in CdTe and the diffusion of each of them are calculated numerically. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.",
keywords = "CdTe, Copper, Grain boundaries, Impurity diffusion, Numerical simulation, Photovoltaic cells",
author = "D. Guo and R. Akis and D. Brinkman and I. Sankin and T. Fang and Dragica Vasileska and Christian Ringhofer",
year = "2014",
month = jan,
day = "1",
language = "English (US)",
isbn = "9781632665812",
series = "International Conference and Exhibition on Device Packaging 2014",
publisher = "International Microelectronics and Packaging Society, Nordic",
pages = "379--381",
booktitle = "International Conference and Exhibition on Device Packaging 2014",
note = "IMAPS International Conference and Exhibition on Device Packaging 2014, in Conjunction with the Global Business Council, GBC Spring Conference ; Conference date: 10-03-2014 Through 13-03-2014",
}