Abstract

In this work, we report on development of one-dimensional reaction-diffusion simulator needed to understand the kinetics of Cu-related metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cells has been studied in time-space domain self-consistently with free carrier transport. Resulting device performance was simulated as a function of stress time, thus showing pronounced effect that the evolution of associated acceptor and donor states can cause on device characteristics. Although ID simulation has intrinsic limitations when applied to poly-crystalline films, the results presented confirm the validity and the potential of the approach presented in better understanding of the performance and metastabilities of CdTe photovoltaic devices.

Original languageEnglish (US)
Title of host publicationRecent Advances in Photovoltaics
PublisherMaterials Research Society
Pages59-65
Number of pages7
Volume1771
ISBN (Electronic)9781605117485
DOIs
StatePublished - 2016
Event2015 MRS Spring Meeting - San Francisco, United States
Duration: Apr 6 2015Apr 10 2015

Other

Other2015 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period4/6/154/10/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Guo, D., Akis, R., Brinkman, D., Moore, A., Fang, T., Sankin, I., Ringhofer, C., & Vasileska, D. (2016). Cu migration and its impact on the metastable behavior of CdTe solar cells. In Recent Advances in Photovoltaics (Vol. 1771, pp. 59-65). Materials Research Society. https://doi.org/10.1557/opl.2015.349