Abstract

In this work we report on development of a 1D reaction-diffusion simulator of Cu kinetics in CdTe solar cells to investigate its role in the observed device performance changes. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport. The simulation successfully predicts decelerating reductions of device performance for open-circuit stress and steadier reductions for short-circuit stress under elevated temperature, in agreement with experimental findings. The simulation results indicate that the movement of Cu interstitials could be responsible for such changes. Although 1D simulation has intrinsic limitations when applied to polycrystalline films, the results presented here imply that the 1D approach is still suitable in better understanding of the performance and metastabilities of CdTe photovoltaic device.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • cadmium compounds
  • copper
  • numerical simulation
  • photovoltaic cells
  • semiconductor device reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Guo, D., Akis, R., Brinkman, D., Moore, A., Fang, T., Sankin, I., Vasileska, D., & Ringhofer, C. (2015). Cu migration and its impact on the metastable behavior of CdTe solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355706] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355706