Abstract

Ge-Se glasses with composition ranging from Ge20Se80 to Ge40Se60 photodoped with Ag and annealed at moderate temperatures are investigated. Raman spectroscopy suggests that Ag photodiffusion brings about the formation of a Ge-Se backbone that is deficient in Se and that the structure is depolymerized due to the extraction of Se during the formation of crystalline products. X-ray diffraction shows that after Ag diffusion into the glass, nanocrystals of Ag2Se and Ag8GeSe6 form, depending on the composition of the host. The crystal size is affected by the molecular clustering of the host.

Original languageEnglish (US)
Pages (from-to)1986-1990
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
StatePublished - Jun 15 2006

Fingerprint

Crystallization
crystallization
Glass
glass
Chemical analysis
Nanocrystals
Raman spectroscopy
nanocrystals
Crystalline materials
X ray diffraction
Crystals
products
diffraction
crystals
x rays
Temperature
temperature

Keywords

  • Amorphous semiconductors
  • Raman scattering
  • Raman spectroscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Crystallization effects in annealed thin Ge-Se films photodiffused with Ag. / Mitkova, M.; Kozicki, Michael; Kim, H. C.; Alford, Terry.

In: Journal of Non-Crystalline Solids, Vol. 352, No. 9-20 SPEC. ISS., 15.06.2006, p. 1986-1990.

Research output: Contribution to journalArticle

@article{805bfeb4bad34e54adaaf0c05fa6114c,
title = "Crystallization effects in annealed thin Ge-Se films photodiffused with Ag",
abstract = "Ge-Se glasses with composition ranging from Ge20Se80 to Ge40Se60 photodoped with Ag and annealed at moderate temperatures are investigated. Raman spectroscopy suggests that Ag photodiffusion brings about the formation of a Ge-Se backbone that is deficient in Se and that the structure is depolymerized due to the extraction of Se during the formation of crystalline products. X-ray diffraction shows that after Ag diffusion into the glass, nanocrystals of Ag2Se and Ag8GeSe6 form, depending on the composition of the host. The crystal size is affected by the molecular clustering of the host.",
keywords = "Amorphous semiconductors, Raman scattering, Raman spectroscopy, X-ray diffraction",
author = "M. Mitkova and Michael Kozicki and Kim, {H. C.} and Terry Alford",
year = "2006",
month = "6",
day = "15",
doi = "10.1016/j.jnoncrysol.2005.09.051",
language = "English (US)",
volume = "352",
pages = "1986--1990",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "9-20 SPEC. ISS.",

}

TY - JOUR

T1 - Crystallization effects in annealed thin Ge-Se films photodiffused with Ag

AU - Mitkova, M.

AU - Kozicki, Michael

AU - Kim, H. C.

AU - Alford, Terry

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Ge-Se glasses with composition ranging from Ge20Se80 to Ge40Se60 photodoped with Ag and annealed at moderate temperatures are investigated. Raman spectroscopy suggests that Ag photodiffusion brings about the formation of a Ge-Se backbone that is deficient in Se and that the structure is depolymerized due to the extraction of Se during the formation of crystalline products. X-ray diffraction shows that after Ag diffusion into the glass, nanocrystals of Ag2Se and Ag8GeSe6 form, depending on the composition of the host. The crystal size is affected by the molecular clustering of the host.

AB - Ge-Se glasses with composition ranging from Ge20Se80 to Ge40Se60 photodoped with Ag and annealed at moderate temperatures are investigated. Raman spectroscopy suggests that Ag photodiffusion brings about the formation of a Ge-Se backbone that is deficient in Se and that the structure is depolymerized due to the extraction of Se during the formation of crystalline products. X-ray diffraction shows that after Ag diffusion into the glass, nanocrystals of Ag2Se and Ag8GeSe6 form, depending on the composition of the host. The crystal size is affected by the molecular clustering of the host.

KW - Amorphous semiconductors

KW - Raman scattering

KW - Raman spectroscopy

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=33745464791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745464791&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2005.09.051

DO - 10.1016/j.jnoncrysol.2005.09.051

M3 - Article

AN - SCOPUS:33745464791

VL - 352

SP - 1986

EP - 1990

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 9-20 SPEC. ISS.

ER -