Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

P. Sims, T. Aoki, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages83-93
Number of pages11
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

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Chemical vapor deposition
Crystalline materials
Aberrations
Molecular beam epitaxy
Diamonds
Semiconductor materials
Atoms
Carbon
Substrates
Chemical analysis
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As). / Sims, P.; Aoki, T.; Menendez, Jose; Kouvetakis, John.

ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. p. 83-93.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sims, P, Aoki, T, Menendez, J & Kouvetakis, J 2015, Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As). in ECS Transactions. 14 edn, vol. 69, Electrochemical Society Inc., pp. 83-93, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0083ecst
@inproceedings{d16bfb310a0142b888971caff5e41679,
title = "Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)",
abstract = "Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.",
author = "P. Sims and T. Aoki and Jose Menendez and John Kouvetakis",
year = "2015",
doi = "10.1149/06914.0083ecst",
language = "English (US)",
isbn = "9781607685395",
volume = "69",
pages = "83--93",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "14",

}

TY - GEN

T1 - Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

AU - Sims, P.

AU - Aoki, T.

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2015

Y1 - 2015

N2 - Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

AB - Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

UR - http://www.scopus.com/inward/record.url?scp=84945915932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945915932&partnerID=8YFLogxK

U2 - 10.1149/06914.0083ecst

DO - 10.1149/06914.0083ecst

M3 - Conference contribution

AN - SCOPUS:84945915932

SN - 9781607685395

VL - 69

SP - 83

EP - 93

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -