Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

P. Sims; T. Aoki; Jose Menendez; John Kouvetakis

doi:10.1149/06914.0083ecst

Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As)

P. Sims, T. Aoki, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Crystalline (III-V)_1-y(IV₂)_y hybrid semiconductors Al_1-xB_xPSi₃ and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH₄)₃ and M(SiH₃)₃ (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV₃ tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH₃)₃. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH₄)₃ and As(GeH₃)₃, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH₄)₃ acts as a carbon-free source of Al compatible with CVD protocols.

Original language	English (US)
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	83-93
Number of pages	11
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0083ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06914.0083ecst

Cite this

Sims, P., Aoki, T., Menendez, J., & Kouvetakis, J. (2015). Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As). In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 83-93). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0083ecst

Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As). / Sims, P.; Aoki, T.; Menendez, Jose et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 83-93 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sims, P, Aoki, T, Menendez, J & Kouvetakis, J 2015, Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As). in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 83-93, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0083ecst

Sims P, Aoki T, Menendez J , Kouvetakis J. Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As). In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 83-93. (ECS Transactions; 14). doi: 10.1149/06914.0083ecst

Sims, P. ; Aoki, T. ; Menendez, Jose et al. / Crystalline tetrahedral phases Al_1-xB_xPSi₃ and Al_1-xB_xAsT₃ (T = Si, Ge) Via Reactions of Al(BH₄)₃ and M(TH₃)₃ (M = P, As). State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 83-93 (ECS Transactions; 14).

@inproceedings{d16bfb310a0142b888971caff5e41679,

title = "Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)",

abstract = "Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.",

author = "P. Sims and T. Aoki and Jose Menendez and John Kouvetakis",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06914.0083ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "14",

pages = "83--93",

editor = "He, {J. H.} and C. O'Dwyer and F. Ren and E. Douglas and C. Jagadish and S. Jang and Wang, {Y. L.} and Lynch, {R. P.} and Anderson, {T. J.} and Hite, {J. K.}",

booktitle = "State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58",

edition = "14",

}

TY - GEN

T1 - Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

AU - Sims, P.

AU - Aoki, T.

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2015

Y1 - 2015

N2 - Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

AB - Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

UR - http://www.scopus.com/inward/record.url?scp=84945915932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945915932&partnerID=8YFLogxK

U2 - 10.1149/06914.0083ecst

DO - 10.1149/06914.0083ecst

M3 - Conference contribution

AN - SCOPUS:84945915932

T3 - ECS Transactions

SP - 83

EP - 93

BT - State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58

A2 - He, J. H.

A2 - O'Dwyer, C.

A2 - Ren, F.

A2 - Douglas, E.

A2 - Jagadish, C.

A2 - Jang, S.

A2 - Wang, Y. L.

A2 - Lynch, R. P.

A2 - Anderson, T. J.

A2 - Hite, J. K.

PB - Electrochemical Society Inc.

T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -