Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

P. Sims, T. Aoki, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Crystalline (III-V)1-y(IV2)y hybrid semiconductors Al1-xBxPSi3 and Al1-xBxAsSi3 have been grown on Si(001) substrates via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH3)3. These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH4)3 and As(GeH3)3, and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH4)3 acts as a carbon-free source of Al compatible with CVD protocols.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
EditorsC. Jagadish, Y. L. Wang, C. O'Dwyer, J. K. Hite, F. Ren, S. Jang, J. H. He, E. Douglas, R. P. Lynch, T. J. Anderson
PublisherElectrochemical Society Inc.
Pages83-93
Number of pages11
Edition14
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number14
Volume69
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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