Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications

Shen Hu, Li Ji, Pei Yu Chen, Bryce I. Edmondson, Heng Lu Chang, Agham Posadas, Hsin Wei Wu, Edward T. Yu, David Smith, Alexander A. Demkov, John G. Ekerdt

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Heteroepitaxial growth of crystalline SrZrO3 (SZO) on Ge (001) by atomic layer deposition is reported. Ge (001) surfaces are pretreated with 0.5-monolayers (ML) of Ba and an amorphous ∼3-nm SZO layer is grown from strontium bis(triisopropylcyclopentadienyl), tetrakis (dimethylamido) zirconium, and water at 225 °C. This ∼3-nm layer crystallizes at 590 °C and subsequent SZO growth at 225 °C leads to crystalline films that do not require further annealing. The film properties are investigated using X-ray photoelectron spectroscopy, x-ray diffraction, aberration-corrected electron microscopy, and capacitance-voltage measurements of metal-oxide semiconductor capacitor structures. Capacitance-voltage measurements of the SrZrO3/Ge heterojunctions reveal a dielectric constant of 30 for SrZrO3 and a leakage current density of 2.1 × 10−8A/cm2 at 1 MV/cm with an equivalent oxide thickness of 0.8 nm. Oxygen plasma pretreatment of Ge (001), Zintl layer formation with 0.5 ML Ba, and atomic deuterium post-growth treatment were explored to lower interface trap density (Dit) and achieved a Dit of 8.56 × 1011 cm−2 eV−1.

Original languageEnglish (US)
Article number044102
JournalJournal of Applied Physics
Volume124
Issue number4
DOIs
StatePublished - Jul 28 2018

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atomic layer epitaxy
electrical measurement
capacitance
oxygen plasma
metal oxide semiconductors
strontium
pretreatment
aberration
heterojunctions
deuterium
electron microscopy
capacitors
x ray diffraction
leakage
traps
photoelectron spectroscopy
permittivity
current density
annealing
oxides

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hu, S., Ji, L., Chen, P. Y., Edmondson, B. I., Chang, H. L., Posadas, A., ... Ekerdt, J. G. (2018). Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications. Journal of Applied Physics, 124(4), [044102]. https://doi.org/10.1063/1.5026790

Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications. / Hu, Shen; Ji, Li; Chen, Pei Yu; Edmondson, Bryce I.; Chang, Heng Lu; Posadas, Agham; Wu, Hsin Wei; Yu, Edward T.; Smith, David; Demkov, Alexander A.; Ekerdt, John G.

In: Journal of Applied Physics, Vol. 124, No. 4, 044102, 28.07.2018.

Research output: Contribution to journalArticle

Hu, S, Ji, L, Chen, PY, Edmondson, BI, Chang, HL, Posadas, A, Wu, HW, Yu, ET, Smith, D, Demkov, AA & Ekerdt, JG 2018, 'Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications', Journal of Applied Physics, vol. 124, no. 4, 044102. https://doi.org/10.1063/1.5026790
Hu, Shen ; Ji, Li ; Chen, Pei Yu ; Edmondson, Bryce I. ; Chang, Heng Lu ; Posadas, Agham ; Wu, Hsin Wei ; Yu, Edward T. ; Smith, David ; Demkov, Alexander A. ; Ekerdt, John G. / Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications. In: Journal of Applied Physics. 2018 ; Vol. 124, No. 4.
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