Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects

Engineering & Materials Science

• Epitaxial films 100%
• Crystalline materials 69%
• Screw dislocations 54%
• Point defects 50%
• Surface diffusion 50%
• Epitaxial growth 46%
• Defects 45%
• Sapphire 43%
• Nitrides 39%
• Spatial distribution 36%
• Nucleation 34%
• X ray diffraction 32%
• Relaxation 30%
• Substrates 23%
• Chemical analysis 21%

Chemical Compounds

• Epitaxial Film 93%
• Screw Dislocation 52%
• Strain 46%
• Crystal Point Defect 42%
• Chemical Transformation 41%
• Surface Diffusion 40%
• Epitaxial Growth 40%
• Nucleation 27%
• Surface 10%
• Application 10%

Physics & Astronomy

• defects 36%
• screw dislocations 9%
• surface diffusion 9%
• point defects 7%
• templates 7%
• nitrides 7%
• spatial distribution 7%
• surface layers 7%
• sapphire 6%
• nucleation 6%
• high resolution 5%
• diffraction 4%
• x rays 3%