Crystalline (Al<inf>1-x</inf>B<inf>x</inf>)PSi<inf>3</inf> and (Al<inf>1-x</inf>B<inf>x</inf>)AsSi<inf>3</inf> tetrahedral phases via reactions of Al(BH<inf>4</inf>)<inf>3</inf> and M(SiH<inf>3</inf>)<inf>3</inf> (M = P, As)

Patrick Sims, Toshihiro Aoki, Ruben Favaro, Patrick Wallace, Andrew White, Chi Xu, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Crystalline Al<inf>1-x</inf>B<inf>x</inf>PSi<inf>3</inf> alloys (x = 0.04-0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH<inf>3</inf>)<inf>3</inf> and Al(BH<inf>4</inf>)<inf>3</inf> using low pressure CVD. The materials have been characterized for structure, composition, phase purity, and optical response by spectroscopic ellipsometry, high-resolution X-ray diffraction, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy, which indicate the formation of single phase monocrystalline layers with tetrahedral structures based on AlPSi<inf>3</inf> parent phase. The latter comprises interlinked AlPSi<inf>3</inf> tetrahedra forming a cubic lattice in which the Al-P pairs are imbedded within a diamond-structured Si matrix as isolated units. Raman scattering of the Al<inf>1-x</inf>B<inf>x</inf>PSi<inf>3</inf> films supports the presence of substitutional B in place of Al and provides strong evidence that the boron is bonded to P in the form of isolated pairs, as expected on the basis of the AlPSi<inf>3</inf> prototype. The substitution of small size B atoms is facilitated by the stabilizing effect of the parent lattice, and it is highly desirable for promoting full lattice matching with Si as required for Si-based solar cell designs. The substitution of B also increases the bond-length disorder leading to a significantly enhanced absorption relative to crystalline Si and AlPSi<inf>3</inf> at E < 3.3 eV which may be beneficial for PV applications. Analogous reactions of As(SiH<inf>3</inf>)<inf>3</inf> with Al(BH<inf>4</inf>)<inf>3</inf> produce Al<inf>1-x</inf>B<inf>x</inf>AsSi<inf>3</inf> crystals in which the B incorporation is limited to doping concentrations at 10<sup>20</sup> atoms/cm<sup>3</sup>. In both cases the classical Al(BH<inf>4</inf>)<inf>3</inf> acts as an efficient delivery source of elemental Al to create crystalline group IV-III-V hybrid materials comprising light, earth abundant elements with possible application in the fields of Si-based technologies and light-element refractory solids.

Original languageEnglish (US)
Pages (from-to)3030-3039
Number of pages10
JournalChemistry of Materials
Volume27
Issue number8
DOIs
StatePublished - Apr 28 2015

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Crystalline materials
Substitution reactions
Atoms
Diamond
Boron
Spectroscopic ellipsometry
Electron energy loss spectroscopy
Hybrid materials
Bond length
High resolution transmission electron microscopy
Phase composition
Refractory materials
Raman scattering
Energy dispersive spectroscopy
Chemical vapor deposition
Diamonds
Solar cells
Earth (planet)
Doping (additives)
X ray diffraction

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Crystalline (Al<inf>1-x</inf>B<inf>x</inf>)PSi<inf>3</inf> and (Al<inf>1-x</inf>B<inf>x</inf>)AsSi<inf>3</inf> tetrahedral phases via reactions of Al(BH<inf>4</inf>)<inf>3</inf> and M(SiH<inf>3</inf>)<inf>3</inf> (M = P, As). / Sims, Patrick; Aoki, Toshihiro; Favaro, Ruben; Wallace, Patrick; White, Andrew; Xu, Chi; Menendez, Jose; Kouvetakis, John.

In: Chemistry of Materials, Vol. 27, No. 8, 28.04.2015, p. 3030-3039.

Research output: Contribution to journalArticle

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title = "Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)",
abstract = "Crystalline Al1-xBxPSi3 alloys (x = 0.04-0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized for structure, composition, phase purity, and optical response by spectroscopic ellipsometry, high-resolution X-ray diffraction, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy, which indicate the formation of single phase monocrystalline layers with tetrahedral structures based on AlPSi3 parent phase. The latter comprises interlinked AlPSi3 tetrahedra forming a cubic lattice in which the Al-P pairs are imbedded within a diamond-structured Si matrix as isolated units. Raman scattering of the Al1-xBxPSi3 films supports the presence of substitutional B in place of Al and provides strong evidence that the boron is bonded to P in the form of isolated pairs, as expected on the basis of the AlPSi3 prototype. The substitution of small size B atoms is facilitated by the stabilizing effect of the parent lattice, and it is highly desirable for promoting full lattice matching with Si as required for Si-based solar cell designs. The substitution of B also increases the bond-length disorder leading to a significantly enhanced absorption relative to crystalline Si and AlPSi3 at E < 3.3 eV which may be beneficial for PV applications. Analogous reactions of As(SiH3)3 with Al(BH4)3 produce Al1-xBxAsSi3 crystals in which the B incorporation is limited to doping concentrations at 1020 atoms/cm3. In both cases the classical Al(BH4)3 acts as an efficient delivery source of elemental Al to create crystalline group IV-III-V hybrid materials comprising light, earth abundant elements with possible application in the fields of Si-based technologies and light-element refractory solids.",
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T1 - Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

AU - Sims, Patrick

AU - Aoki, Toshihiro

AU - Favaro, Ruben

AU - Wallace, Patrick

AU - White, Andrew

AU - Xu, Chi

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2015/4/28

Y1 - 2015/4/28

N2 - Crystalline Al1-xBxPSi3 alloys (x = 0.04-0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized for structure, composition, phase purity, and optical response by spectroscopic ellipsometry, high-resolution X-ray diffraction, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy, which indicate the formation of single phase monocrystalline layers with tetrahedral structures based on AlPSi3 parent phase. The latter comprises interlinked AlPSi3 tetrahedra forming a cubic lattice in which the Al-P pairs are imbedded within a diamond-structured Si matrix as isolated units. Raman scattering of the Al1-xBxPSi3 films supports the presence of substitutional B in place of Al and provides strong evidence that the boron is bonded to P in the form of isolated pairs, as expected on the basis of the AlPSi3 prototype. The substitution of small size B atoms is facilitated by the stabilizing effect of the parent lattice, and it is highly desirable for promoting full lattice matching with Si as required for Si-based solar cell designs. The substitution of B also increases the bond-length disorder leading to a significantly enhanced absorption relative to crystalline Si and AlPSi3 at E < 3.3 eV which may be beneficial for PV applications. Analogous reactions of As(SiH3)3 with Al(BH4)3 produce Al1-xBxAsSi3 crystals in which the B incorporation is limited to doping concentrations at 1020 atoms/cm3. In both cases the classical Al(BH4)3 acts as an efficient delivery source of elemental Al to create crystalline group IV-III-V hybrid materials comprising light, earth abundant elements with possible application in the fields of Si-based technologies and light-element refractory solids.

AB - Crystalline Al1-xBxPSi3 alloys (x = 0.04-0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized for structure, composition, phase purity, and optical response by spectroscopic ellipsometry, high-resolution X-ray diffraction, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy, which indicate the formation of single phase monocrystalline layers with tetrahedral structures based on AlPSi3 parent phase. The latter comprises interlinked AlPSi3 tetrahedra forming a cubic lattice in which the Al-P pairs are imbedded within a diamond-structured Si matrix as isolated units. Raman scattering of the Al1-xBxPSi3 films supports the presence of substitutional B in place of Al and provides strong evidence that the boron is bonded to P in the form of isolated pairs, as expected on the basis of the AlPSi3 prototype. The substitution of small size B atoms is facilitated by the stabilizing effect of the parent lattice, and it is highly desirable for promoting full lattice matching with Si as required for Si-based solar cell designs. The substitution of B also increases the bond-length disorder leading to a significantly enhanced absorption relative to crystalline Si and AlPSi3 at E < 3.3 eV which may be beneficial for PV applications. Analogous reactions of As(SiH3)3 with Al(BH4)3 produce Al1-xBxAsSi3 crystals in which the B incorporation is limited to doping concentrations at 1020 atoms/cm3. In both cases the classical Al(BH4)3 acts as an efficient delivery source of elemental Al to create crystalline group IV-III-V hybrid materials comprising light, earth abundant elements with possible application in the fields of Si-based technologies and light-element refractory solids.

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