Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Houqiang Fu, Zhijian Lu, Xuanqi Huang, Hong Chen, Yuji Zhao

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes. It is found that SQW on a certain group of semipolar planes (55° <θ <90° tilted from c-plane) exhibits low transition frequency and long wavelength response with high absorption quantum efficiency, which is attributed to the weak polarization-related effects. Furthermore, these semipolar SQWs show tunable transition frequency and absorption wavelength with different quantum well thicknesses, and stable device performance can be achieved with changing barrier thickness and Al compositions. All the results indicate that the semipolar AlGaN/GaN quantum wells are promising candidate for the design and fabrication of high performance low frequency and long wavelength optoelectronic devices.

Original languageEnglish (US)
Article number174502
JournalJournal of Applied Physics
Volume119
Issue number17
DOIs
StatePublished - May 7 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications'. Together they form a unique fingerprint.

  • Cite this