Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

M. J. Rack; Trevor Thornton; D. K. Ferry; Jeff Roberts; Richard C. Westhoff; McDonald Robinson

doi:10.1016/S0921-5107(01)00725-5

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

M. J. Rack, Trevor Thornton, D. K. Ferry, Jeff Roberts, Richard C. Westhoff, McDonald Robinson

Research output: Contribution to journal › Article › peer-review

Abstract

High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K.

Original language	English (US)
Pages (from-to)	277-281
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	87
Issue number	3
DOIs	https://doi.org/10.1016/S0921-5107(01)00725-5
State	Published - Dec 19 2001

Keywords

APCVD
Cryogenic
Strained silicon quantum wells

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(01)00725-5

Cite this

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title = "Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD",

abstract = "High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K.",

keywords = "APCVD, Cryogenic, Strained silicon quantum wells",

author = "Rack, {M. J.} and Trevor Thornton and Ferry, {D. K.} and Jeff Roberts and Westhoff, {Richard C.} and McDonald Robinson",

note = "Funding Information: The authors gratefully acknowledge support from NASA under Phase I SBIR contract #NAS2-99007.",

year = "2001",

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doi = "10.1016/S0921-5107(01)00725-5",

language = "English (US)",

volume = "87",

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TY - JOUR

T1 - Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

AU - Rack, M. J.

AU - Thornton, Trevor

AU - Ferry, D. K.

AU - Roberts, Jeff

AU - Westhoff, Richard C.

AU - Robinson, McDonald

N1 - Funding Information: The authors gratefully acknowledge support from NASA under Phase I SBIR contract #NAS2-99007.

PY - 2001/12/19

Y1 - 2001/12/19

N2 - High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K.

AB - High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K.

KW - APCVD

KW - Cryogenic

KW - Strained silicon quantum wells

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Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Abstract

Keywords

ASJC Scopus subject areas

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