Cryogenic field effect transistors using strained silicon quantum wells in Si: SiGe heterostructures grown by APCVD

M. J. Rack, Trevor Thornton, D. K. Ferry, Jeff Roberts, Richard C. Westhoff, McDonald Robinson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K.

Original languageEnglish (US)
Pages (from-to)277-281
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume87
Issue number3
DOIs
StatePublished - Dec 19 2001

Fingerprint

Silicon
Field effect transistors
Cryogenics
Semiconductor quantum wells
cryogenics
Heterojunctions
field effect transistors
quantum wells
silicon
Fabrication
Electronic properties
fabrication
Atmospheric pressure
Chemical vapor deposition
Modulation
Single crystals
CMOS
atmospheric pressure
Networks (circuits)
vapor deposition

Keywords

  • APCVD
  • Cryogenic
  • Strained silicon quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Cryogenic field effect transistors using strained silicon quantum wells in Si : SiGe heterostructures grown by APCVD. / Rack, M. J.; Thornton, Trevor; Ferry, D. K.; Roberts, Jeff; Westhoff, Richard C.; Robinson, McDonald.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 87, No. 3, 19.12.2001, p. 277-281.

Research output: Contribution to journalArticle

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