Abstract
This article reports the temperature-dependent characterization and analysis of quasiballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) from a 22-nm commercial CMOS technology. Measurements of current-voltage (I-V) characteristics for temperatures ranging from 10 up to 300 K are presented in this article. Key electrical parameters are extracted as a function of temperature, including threshold voltage, subthreshold swing, on-state current, series resistance, mobility, mean free path, and ballistic ratio. An experimentally validated virtual source modeling approach that incorporates back-gate biasing is presented in this article for temperatures down to 10 K. A comparison with bulk devices reveals less reduction in ballisticity at low temperatures and is attributed to a smaller contribution from ionized impurity scattering due to lower doping in the fully depleted (FD) channel.
Original language | English (US) |
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Journal | IEEE Transactions on Electron Devices |
DOIs | |
State | Accepted/In press - 2022 |
Keywords
- Ballistic transport
- CMOS
- compact model
- cryogenic
- Cryogenics
- Current measurement
- Logic gates
- mean free path
- metal-oxidesemiconductor field-effect-transistor (MOSFET)
- mobility
- MOSFET
- Nanoscale devices
- nanoscale.
- Resistance
- Voltage measurement
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering