Cryogenic Characterization and Analysis of Nanoscale SOI FETs Using a Virtual Source Model

Guantong Zhou, Fahad Al Mamun, Jean Yang-Scharlotta, Dragica Vasileska, Ivan Sanchez Esqueda

Research output: Contribution to journalArticlepeer-review

Abstract

This article reports the temperature-dependent characterization and analysis of quasiballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) from a 22-nm commercial CMOS technology. Measurements of current-voltage (I-V) characteristics for temperatures ranging from 10 up to 300 K are presented in this article. Key electrical parameters are extracted as a function of temperature, including threshold voltage, subthreshold swing, on-state current, series resistance, mobility, mean free path, and ballistic ratio. An experimentally validated virtual source modeling approach that incorporates back-gate biasing is presented in this article for temperatures down to 10 K. A comparison with bulk devices reveals less reduction in ballisticity at low temperatures and is attributed to a smaller contribution from ionized impurity scattering due to lower doping in the fully depleted (FD) channel.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - 2022

Keywords

  • Ballistic transport
  • CMOS
  • compact model
  • cryogenic
  • Cryogenics
  • Current measurement
  • Logic gates
  • mean free path
  • metal-oxidesemiconductor field-effect-transistor (MOSFET)
  • mobility
  • MOSFET
  • Nanoscale devices
  • nanoscale.
  • Resistance
  • Voltage measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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