Abstract
This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4×4 μm 2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 773-778 |
Number of pages | 6 |
Volume | 441 |
State | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials