Abstract
This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4×4 μm 2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 773-778 |
| Number of pages | 6 |
| Volume | 441 |
| State | Published - 1997 |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
| Other | Proceedings of the 1996 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials