Cross-sectional transmission electron microscopy of Si-based nanostructures

Maxim V. Sidorov, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4×4 μm 2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages773-778
Number of pages6
Volume441
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Sidorov, M. V., & Smith, D. (1997). Cross-sectional transmission electron microscopy of Si-based nanostructures. In Materials Research Society Symposium - Proceedings (Vol. 441, pp. 773-778). Materials Research Society.