14 Scopus citations

Abstract

In this survey, the design challenges of cross-point memory arrays with emerging nonvolatile memory technologies are discussed. In particular, the write/read scheme for cross-point memory and the associated problems such as voltage drop along interconnect and sneak path current via unselected cells are analyzed. The write voltage margin and power consumption, as well as the read-current sensing margin and latency, are simulated with a voltage-mode sense amplifier for different array sizes and nonlinearity of the selector devices. Finally, state-of-the-art performance and mechanism of selector devices are summarized and they are classified as Type I selector with exponential current–voltage (I–V) characteristics and Type II selector with threshold I–V characteristics. Design challenges and device engineering guidelines are discussed for both types of selector in the summary.

Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalJournal of Computational Electronics
DOIs
StateAccepted/In press - Aug 31 2017

Keywords

  • Cross-point memory
  • Emerging NVM
  • Selector
  • Sneak path
  • Write/read margin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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