Abstract

GaInAs/GaAs and GaAsSb/GaAs heterostructures were grown by molecular beam epitaxy with different In/Sb compositions and thicknesses in order to obtain samples with different amounts of initial strain. High resolution x-ray diffraction was used to extract the alloys composition, specify the presence of dislocations, and determine the extent of relaxation while transmission electron microscopy and x-ray topography were used to observe these dislocations and characterize their type and density. The onset for the formation of misfit dislocations was found to be in agreement with the equilibrium theory. However, the films remained coherently strained for thicknesses far beyond this value. The onset for strain relaxation was found by considering the kinetics of plastic deformation using the approach proposed by Tsao and coworkers [Phys. Rev. Lett. 59, 2455 (1987)]. The mechanism of extended defect creation leading to measurable strain relief is described as a multistage process related with the structural stability and metastability of the epitaxial films.

Original languageEnglish (US)
Article number02L113
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume34
Issue number2
DOIs
StatePublished - Mar 1 2016

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

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