Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

Engineering & Materials Science

• Wave interference 100%
• Reflection high energy electron diffraction 92%
• Monolayers 88%
• Dislocations (crystals) 71%
• Transmission electron microscopy 69%
• X rays 61%
• Atomic layer epitaxy 49%
• Lattice mismatch 40%
• Molecular beam epitaxy 34%
• Relaxation processes 33%
• Diffraction patterns 32%
• Nucleation 23%
• X ray diffraction 22%
• Relaxation 20%

Chemical Compounds

• Misfit Dislocation 82%
• Reflection High Energy Electron Diffraction 72%
• Monolayer 50%
• Transmission Electron Microscopy 44%
• X-Ray 40%
• Molecular Beam Epitaxy 32%
• Nucleation 18%
• Strain 15%
• X-Ray Diffraction 11%

Physics & Astronomy

• interference 46%
• transmission electron microscopy 44%
• x rays 30%
• high energy electrons 22%
• electron diffraction 19%
• caps 11%
• atomic layer epitaxy 11%
• molecular beam epitaxy 9%
• diffraction patterns 9%
• nucleation 8%
• diffraction 6%