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Dive into the research topics of 'Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates'. Together they form a unique fingerprint.- Sort by
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D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, Thomas O. McConkie, Lin Zhou, David Smith
Research output: Contribution to journal › Article › peer-review