Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, Thomas O. McConkie, Lin Zhou, David Smith

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (0001) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

Original languageEnglish (US)
Pages (from-to)121-132
Number of pages12
JournalJournal of Crystal Growth
Volume456
DOIs
StatePublished - Dec 15 2016

Fingerprint

Vapor phase epitaxy
Molecular beam epitaxy
Hydrides
vapor phase epitaxy
hydrides
molecular beam epitaxy
Substrates
Impurities
impurities
Gallium nitride
Aluminum Oxide
gallium nitrides
Growth temperature
Film growth
Epitaxial growth
Sapphire
cleaning
thermal decomposition
Cleaning
purity

Keywords

  • A1. Interfaces
  • A1. Line Defects
  • A1. Substrates
  • B1. Molecular beam epitaxy
  • B3. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates. / Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David.

In: Journal of Crystal Growth, Vol. 456, 15.12.2016, p. 121-132.

Research output: Contribution to journalArticle

Storm, D. F. ; Hardy, M. T. ; Katzer, D. S. ; Nepal, N. ; Downey, B. P. ; Meyer, D. J. ; McConkie, Thomas O. ; Zhou, Lin ; Smith, David. / Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates. In: Journal of Crystal Growth. 2016 ; Vol. 456. pp. 121-132.
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AU - Storm, D. F.

AU - Hardy, M. T.

AU - Katzer, D. S.

AU - Nepal, N.

AU - Downey, B. P.

AU - Meyer, D. J.

AU - McConkie, Thomas O.

AU - Zhou, Lin

AU - Smith, David

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AB - While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (0001) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

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