Critical concentration of hot carriers in a quasi-two-dimensional semiconductor

D. K. Ferry

doi:10.1016/0375-9601(77)90831-3

Critical concentration of hot carriers in a quasi-two-dimensional semiconductor

D. K. Ferry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.

Original language	English (US)
Pages (from-to)	243-244
Number of pages	2
Journal	Physics Letters A
Volume	60
Issue number	3
DOIs	https://doi.org/10.1016/0375-9601(77)90831-3
State	Published - Feb 21 1977
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/0375-9601(77)90831-3

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title = "Critical concentration of hot carriers in a quasi-two-dimensional semiconductor",

abstract = "The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.",

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AU - Ferry, D. K.

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N2 - The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.

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Critical concentration of hot carriers in a quasi-two-dimensional semiconductor

Abstract

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