TY - JOUR
T1 - Critical concentration of hot carriers in a quasi-two-dimensional semiconductor
AU - Ferry, D. K.
PY - 1977/2/21
Y1 - 1977/2/21
N2 - The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.
AB - The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.
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U2 - 10.1016/0375-9601(77)90831-3
DO - 10.1016/0375-9601(77)90831-3
M3 - Article
AN - SCOPUS:49449120869
VL - 60
SP - 243
EP - 244
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 3
ER -