Critical concentration of hot carriers in a quasi-two-dimensional semiconductor

D. K. Ferry

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.

Original languageEnglish (US)
Pages (from-to)243-244
Number of pages2
JournalPhysics Letters A
Volume60
Issue number3
DOIs
StatePublished - Feb 21 1977

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this