Abstract

We explore the potential utility of the II-IV-V semiconductor ZnGeAs 2 as the absorber material in solar cells. As-deposited ZnGeAs 2 films prepared by pulsed laser deposition are amorphous because of the limited substrate temperature that can be used without the rapid loss of volatile Zn and As. Thermal processing above 450°C results in crystallization and improved electrical properties with hole mobilities as high as 58 cm2/V s. The annealed films were used to fabricate p-type ZnGeAs2: n-type CdS cells on SnO2-buffered borosilicate glass substrates in the so-called superstrate geometry. Light-induced currents of up to ~2 mA/cm2 and open-circuit voltages of up to 470 mV were observed using backside illumination, indicating that these nascent devices hold potential for realizing high performance solar cells from earth-abundant elements. The performance of the devices fabricated to-date is degraded by conduction through shorts resulting from the presence of micron-sized pinholes in the absorber layer.

Original languageEnglish (US)
Pages (from-to)906-917
Number of pages12
JournalProgress in Photovoltaics: Research and Applications
Volume21
Issue number5
DOIs
StatePublished - Aug 2013

Fingerprint

Solar cells
solar cells
absorbers (materials)
Hole mobility
Borosilicate glass
Induced currents
hole mobility
borosilicate glass
Open circuit voltage
pinholes
Substrates
Pulsed laser deposition
Crystallization
open circuit voltage
pulsed laser deposition
absorbers
Electric properties
Lighting
Earth (planet)
illumination

Keywords

  • chalcopyrites
  • earth-abundant
  • photovoltaics
  • pulsed laser deposition
  • solar cell
  • ZnGeAs2

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Peshek, T. J., Zhang, L., Singh, R., Tang, Z., Vahidi, M., To, B., ... Van Schilfgaarde, M. (2013). Criteria for improving the properties of ZnGeAs2 solar cells. Progress in Photovoltaics: Research and Applications, 21(5), 906-917. https://doi.org/10.1002/pip.2177

Criteria for improving the properties of ZnGeAs2 solar cells. / Peshek, Timothy J.; Zhang, Lei; Singh, Rakesh; Tang, Zhizhong; Vahidi, Mahmoud; To, Bobby; Coutts, Timothy J.; Gessert, Timothy A.; Newman, Nathan; Van Schilfgaarde, Mark.

In: Progress in Photovoltaics: Research and Applications, Vol. 21, No. 5, 08.2013, p. 906-917.

Research output: Contribution to journalArticle

Peshek, TJ, Zhang, L, Singh, R, Tang, Z, Vahidi, M, To, B, Coutts, TJ, Gessert, TA, Newman, N & Van Schilfgaarde, M 2013, 'Criteria for improving the properties of ZnGeAs2 solar cells', Progress in Photovoltaics: Research and Applications, vol. 21, no. 5, pp. 906-917. https://doi.org/10.1002/pip.2177
Peshek, Timothy J. ; Zhang, Lei ; Singh, Rakesh ; Tang, Zhizhong ; Vahidi, Mahmoud ; To, Bobby ; Coutts, Timothy J. ; Gessert, Timothy A. ; Newman, Nathan ; Van Schilfgaarde, Mark. / Criteria for improving the properties of ZnGeAs2 solar cells. In: Progress in Photovoltaics: Research and Applications. 2013 ; Vol. 21, No. 5. pp. 906-917.
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