Crack formation in TiN films deposited on Pa-n due to large thermal mismatch

Engineering & Materials Science

• Crack initiation 84%
• Annealing 57%
• Metals 55%
• X ray analysis 43%
• Low-k dielectric 42%
• Diffusion barriers 42%
• Hot Temperature 41%
• Titanium nitride 40%
• Magnetron sputtering 38%
• Electromigration 36%
• Metallizing 33%
• Silver 31%
• Compressive stress 29%
• Thermal expansion 29%
• Permittivity 28%
• Tensile stress 28%
• Thermal stress 28%
• Integrated circuits 26%
• Adhesion 26%
• Fracture toughness 25%
• Copper 23%
• Water 15%
• Temperature 11%

Physics & Astronomy

• crack initiation 100%
• manufacturing 47%
• metals 44%
• electrical resistivity 36%
• titanium nitrides 34%
• annealing 34%
• electromigration 33%
• budgets 31%
• thermal stresses 30%
• tensile stress 29%
• compatibility 28%
• fracture strength 28%
• integrated circuits 27%
• discontinuity 25%
• thermal expansion 24%
• adhesion 24%
• magnetron sputtering 24%
• silver 23%
• direct current 22%
• copper 20%
• permittivity 19%
• requirements 19%
• conduction 19%
• probes 17%
• water 16%
• coefficients 15%
• x rays 12%

Chemical Compounds

• Annealing 45%
• Liquid Film 41%
• Fracture Strength 41%
• Metal 38%
• Diffusion Barrier 36%
• Magnetron Sputtering 33%
• Thermal Expansion 30%
• Nitride 27%
• Dielectric Constant 26%
• Dielectric Material 25%
• Resistance 18%
• Diffusion 17%
• Probe 17%