Stress evolution during intermittent homoepitaxial growth of (111)-oriented Copper and Silver thin films was analyzed. The atomic scale surface roughness was also analyzed using reflection high energy electron diffraction. It was observed that reversible stress changes during interruptions of film growth were associated with changes in atomic scale surface structure. It was also observed that a change in tensile stress occurred when growth was stopped and reversed when growth was resumed.
ASJC Scopus subject areas
- Physics and Astronomy(all)