Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth

D. F. Storm, D. S. Katzer, S. C. Binari, B. V. Shanabrook, Lin Zhou, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have demonstrated that carrier mobility and buffer leakage in MBE-grown AlGaN/GaN high electron mobility transistor structures grown on SiC depend sensitively on the Al/N flux ratio during the growth of the AlN nucleation layer (NL). In particular, as the Al/N flux ratio increases from slightly below to slightly above unity, the Hall mobility increases from 1050 cm 2/V·s to 1450 cmVV-s and the buffer leakage increases by three orders of magnitude. Observations by transmission electron microscopy indicate that in structures in which the AlN nucleation layer growth was Al-rich the AlN and GaN layers contain stacking faults, the interface between them is rough, and the near-interface region of the nominally wurtzite-GaN buffer contains regions of cubic material. By contrast, structures in which the AlN NL was grown Al-lean show sharp interfaces between the AlN and GaN layers, and neither stacking faults nor cubic material were observed.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2212-2215
Number of pages4
Volume2
Edition7
DOIs
StatePublished - 2005

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nucleation
electronics
buffers
crystal defects
leakage
carrier mobility
high electron mobility transistors
wurtzite
unity
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Storm, D. F., Katzer, D. S., Binari, S. C., Shanabrook, B. V., Zhou, L., & Smith, D. (2005). Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2212-2215) https://doi.org/10.1002/pssc.200461432

Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. / Storm, D. F.; Katzer, D. S.; Binari, S. C.; Shanabrook, B. V.; Zhou, Lin; Smith, David.

Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. p. 2212-2215.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Storm, DF, Katzer, DS, Binari, SC, Shanabrook, BV, Zhou, L & Smith, D 2005, Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. in Physica Status Solidi C: Conferences. 7 edn, vol. 2, pp. 2212-2215. https://doi.org/10.1002/pssc.200461432
Storm DF, Katzer DS, Binari SC, Shanabrook BV, Zhou L, Smith D. Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. In Physica Status Solidi C: Conferences. 7 ed. Vol. 2. 2005. p. 2212-2215 https://doi.org/10.1002/pssc.200461432
Storm, D. F. ; Katzer, D. S. ; Binari, S. C. ; Shanabrook, B. V. ; Zhou, Lin ; Smith, David. / Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. pp. 2212-2215
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abstract = "We have demonstrated that carrier mobility and buffer leakage in MBE-grown AlGaN/GaN high electron mobility transistor structures grown on SiC depend sensitively on the Al/N flux ratio during the growth of the AlN nucleation layer (NL). In particular, as the Al/N flux ratio increases from slightly below to slightly above unity, the Hall mobility increases from 1050 cm 2/V·s to 1450 cmVV-s and the buffer leakage increases by three orders of magnitude. Observations by transmission electron microscopy indicate that in structures in which the AlN nucleation layer growth was Al-rich the AlN and GaN layers contain stacking faults, the interface between them is rough, and the near-interface region of the nominally wurtzite-GaN buffer contains regions of cubic material. By contrast, structures in which the AlN NL was grown Al-lean show sharp interfaces between the AlN and GaN layers, and neither stacking faults nor cubic material were observed.",
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AB - We have demonstrated that carrier mobility and buffer leakage in MBE-grown AlGaN/GaN high electron mobility transistor structures grown on SiC depend sensitively on the Al/N flux ratio during the growth of the AlN nucleation layer (NL). In particular, as the Al/N flux ratio increases from slightly below to slightly above unity, the Hall mobility increases from 1050 cm 2/V·s to 1450 cmVV-s and the buffer leakage increases by three orders of magnitude. Observations by transmission electron microscopy indicate that in structures in which the AlN nucleation layer growth was Al-rich the AlN and GaN layers contain stacking faults, the interface between them is rough, and the near-interface region of the nominally wurtzite-GaN buffer contains regions of cubic material. By contrast, structures in which the AlN NL was grown Al-lean show sharp interfaces between the AlN and GaN layers, and neither stacking faults nor cubic material were observed.

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