Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth

D. F. Storm, D. S. Katzer, S. C. Binari, B. V. Shanabrook, Lin Zhou, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have demonstrated that carrier mobility and buffer leakage in MBE-grown AlGaN/GaN high electron mobility transistor structures grown on SiC depend sensitively on the Al/N flux ratio during the growth of the AlN nucleation layer (NL). In particular, as the Al/N flux ratio increases from slightly below to slightly above unity, the Hall mobility increases from 1050 cm 2/V·s to 1450 cmVV-s and the buffer leakage increases by three orders of magnitude. Observations by transmission electron microscopy indicate that in structures in which the AlN nucleation layer growth was Al-rich the AlN and GaN layers contain stacking faults, the interface between them is rough, and the near-interface region of the nominally wurtzite-GaN buffer contains regions of cubic material. By contrast, structures in which the AlN NL was grown Al-lean show sharp interfaces between the AlN and GaN layers, and neither stacking faults nor cubic material were observed.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2212-2215
Number of pages4
Volume2
Edition7
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Storm, D. F., Katzer, D. S., Binari, S. C., Shanabrook, B. V., Zhou, L., & Smith, D. (2005). Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2212-2215) https://doi.org/10.1002/pssc.200461432