Abstract
To correlate microscopic with macroscopic properties and to investigate minority carrier recombination at the twins planes in dendritic web Si on a microscopic scale, cross-sectional EBIC has been developed. The twin planes are found to be transparent to minority carriers in as-grown material irrespective of its quality. Upon cell processing, however, it is found that the twin planes in poor quality material become highly recombinative while recombination at regions close to the surface decreases. In good quality web material the twin planes remain benign after thermal cycling. DLTS measurements have also been performed and the results are consistent with EBIC. Cross-sectional TEM results also correlate with the electrical measurements showing the appearance of a large density of defect clusters at the twin planes of the poor quality web upon thermal processing.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Murray J. Gibson, Harold G. Craighead |
| Place of Publication | Bellingham, WA, United States |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 237-248 |
| Number of pages | 12 |
| Volume | 1284 |
| ISBN (Print) | 0819403350 |
| State | Published - 1990 |
| Event | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA Duration: Mar 20 1990 → Mar 21 1990 |
Other
| Other | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors |
|---|---|
| City | San Diego, CA, USA |
| Period | 3/20/90 → 3/21/90 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics