Correlation of electrical and structural microanalysis of dendritic web silicon

K. Joardar, C. O. Jung, Stephen Krause, D. K. Schroder, D. L. Meier

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To correlate microscopic with macroscopic properties and to investigate minority carrier recombination at the twins planes in dendritic web Si on a microscopic scale, cross-sectional EBIC has been developed. The twin planes are found to be transparent to minority carriers in as-grown material irrespective of its quality. Upon cell processing, however, it is found that the twin planes in poor quality material become highly recombinative while recombination at regions close to the surface decreases. In good quality web material the twin planes remain benign after thermal cycling. DLTS measurements have also been performed and the results are consistent with EBIC. Cross-sectional TEM results also correlate with the electrical measurements showing the appearance of a large density of defect clusters at the twin planes of the poor quality web upon thermal processing.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMurray J. Gibson, Harold G. Craighead
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages237-248
Number of pages12
Volume1284
ISBN (Print)0819403350
StatePublished - 1990
EventNanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

Other

OtherNanostructures and Microstructure Correlation with Physical Properties of Semiconductors
CitySan Diego, CA, USA
Period3/20/903/21/90

Fingerprint

Microanalysis
microanalysis
Silicon
silicon
minority carriers
Deep level transient spectroscopy
Thermal cycling
electrical measurement
Transmission electron microscopy
Defects
Processing
transmission electron microscopy
cycles
defects
cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Joardar, K., Jung, C. O., Krause, S., Schroder, D. K., & Meier, D. L. (1990). Correlation of electrical and structural microanalysis of dendritic web silicon. In M. J. Gibson, & H. G. Craighead (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1284, pp. 237-248). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Correlation of electrical and structural microanalysis of dendritic web silicon. / Joardar, K.; Jung, C. O.; Krause, Stephen; Schroder, D. K.; Meier, D. L.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Murray J. Gibson; Harold G. Craighead. Vol. 1284 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. p. 237-248.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Joardar, K, Jung, CO, Krause, S, Schroder, DK & Meier, DL 1990, Correlation of electrical and structural microanalysis of dendritic web silicon. in MJ Gibson & HG Craighead (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1284, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 237-248, Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors, San Diego, CA, USA, 3/20/90.
Joardar K, Jung CO, Krause S, Schroder DK, Meier DL. Correlation of electrical and structural microanalysis of dendritic web silicon. In Gibson MJ, Craighead HG, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1284. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1990. p. 237-248
Joardar, K. ; Jung, C. O. ; Krause, Stephen ; Schroder, D. K. ; Meier, D. L. / Correlation of electrical and structural microanalysis of dendritic web silicon. Proceedings of SPIE - The International Society for Optical Engineering. editor / Murray J. Gibson ; Harold G. Craighead. Vol. 1284 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. pp. 237-248
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