TY - JOUR
T1 - Correlation of crystalline defects with photoluminescence of InGaN layers
AU - Faleev, Nikolai
AU - Jampana, Balakrishnam
AU - Jani, Omkar
AU - Yu, Hongbo
AU - Opila, Robert
AU - Ferguson, Ian
AU - Honsberg, Christiana
PY - 2009
Y1 - 2009
N2 - We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.
AB - We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.
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U2 - 10.1063/1.3202409
DO - 10.1063/1.3202409
M3 - Article
AN - SCOPUS:68349133395
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
M1 - 051915
ER -