Correlation of crystalline defects with photoluminescence of InGaN layers

Nikolai Faleev, Balakrishnam Jampana, Omkar Jani, Hongbo Yu, Robert Opila, Ian Ferguson, Christiana Honsberg

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.

Original languageEnglish (US)
Article number051915
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
StatePublished - Aug 14 2009

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this