Correlation of coercivity and microstructure of thin CoFe films

C. L. Platt, A. E. Berkowitz, David Smith, Martha McCartney

Research output: Contribution to journalArticle

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Abstract

The magnetic and structural properties of sputtered Co50Fe50(CoFe) films were examined. CoFe films 300 Å thick deposited on Si substrates at room temperature showed large coercive fields of 140 Oe. When similar thickness films were deposited at 100°C, the coercivity dropped to 90 Oe, and when they were deposited on CoO, the coercivity was reduced to 12 Oe. Cross-sectional imaging with transmission electron microscopy revealed that the CoO underlayer had induced a columnar grain structure in the CoFe, with grain diameters ranging from 50 to 150 Å. CoFe films grown on Si contained larger grains of 200-350 Å in diameter with fewer distinct vertical grain boundaries. Lorentz microscopy showed that domain walls in the hard CoFe film formed complex, fixed patterns in fields less than the coercivity, whereas walls in the CoFe/CoO sample were more conformal and mobile in response to changing fields. Possible structural origins for the wide variation in coercivity obtained with different substrates, deposition temperature, and thickness of CoFe films are discussed.

Original languageEnglish (US)
Pages (from-to)2058-2062
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number4
StatePublished - Aug 15 2000

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coercivity
microstructure
thin films
domain wall
film thickness
grain boundaries
magnetic properties
microscopy
transmission electron microscopy
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Correlation of coercivity and microstructure of thin CoFe films. / Platt, C. L.; Berkowitz, A. E.; Smith, David; McCartney, Martha.

In: Journal of Applied Physics, Vol. 88, No. 4, 15.08.2000, p. 2058-2062.

Research output: Contribution to journalArticle

@article{275cf55bf9fb44ad8f5936644b00344d,
title = "Correlation of coercivity and microstructure of thin CoFe films",
abstract = "The magnetic and structural properties of sputtered Co50Fe50(CoFe) films were examined. CoFe films 300 {\AA} thick deposited on Si substrates at room temperature showed large coercive fields of 140 Oe. When similar thickness films were deposited at 100°C, the coercivity dropped to 90 Oe, and when they were deposited on CoO, the coercivity was reduced to 12 Oe. Cross-sectional imaging with transmission electron microscopy revealed that the CoO underlayer had induced a columnar grain structure in the CoFe, with grain diameters ranging from 50 to 150 {\AA}. CoFe films grown on Si contained larger grains of 200-350 {\AA} in diameter with fewer distinct vertical grain boundaries. Lorentz microscopy showed that domain walls in the hard CoFe film formed complex, fixed patterns in fields less than the coercivity, whereas walls in the CoFe/CoO sample were more conformal and mobile in response to changing fields. Possible structural origins for the wide variation in coercivity obtained with different substrates, deposition temperature, and thickness of CoFe films are discussed.",
author = "Platt, {C. L.} and Berkowitz, {A. E.} and David Smith and Martha McCartney",
year = "2000",
month = "8",
day = "15",
language = "English (US)",
volume = "88",
pages = "2058--2062",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Correlation of coercivity and microstructure of thin CoFe films

AU - Platt, C. L.

AU - Berkowitz, A. E.

AU - Smith, David

AU - McCartney, Martha

PY - 2000/8/15

Y1 - 2000/8/15

N2 - The magnetic and structural properties of sputtered Co50Fe50(CoFe) films were examined. CoFe films 300 Å thick deposited on Si substrates at room temperature showed large coercive fields of 140 Oe. When similar thickness films were deposited at 100°C, the coercivity dropped to 90 Oe, and when they were deposited on CoO, the coercivity was reduced to 12 Oe. Cross-sectional imaging with transmission electron microscopy revealed that the CoO underlayer had induced a columnar grain structure in the CoFe, with grain diameters ranging from 50 to 150 Å. CoFe films grown on Si contained larger grains of 200-350 Å in diameter with fewer distinct vertical grain boundaries. Lorentz microscopy showed that domain walls in the hard CoFe film formed complex, fixed patterns in fields less than the coercivity, whereas walls in the CoFe/CoO sample were more conformal and mobile in response to changing fields. Possible structural origins for the wide variation in coercivity obtained with different substrates, deposition temperature, and thickness of CoFe films are discussed.

AB - The magnetic and structural properties of sputtered Co50Fe50(CoFe) films were examined. CoFe films 300 Å thick deposited on Si substrates at room temperature showed large coercive fields of 140 Oe. When similar thickness films were deposited at 100°C, the coercivity dropped to 90 Oe, and when they were deposited on CoO, the coercivity was reduced to 12 Oe. Cross-sectional imaging with transmission electron microscopy revealed that the CoO underlayer had induced a columnar grain structure in the CoFe, with grain diameters ranging from 50 to 150 Å. CoFe films grown on Si contained larger grains of 200-350 Å in diameter with fewer distinct vertical grain boundaries. Lorentz microscopy showed that domain walls in the hard CoFe film formed complex, fixed patterns in fields less than the coercivity, whereas walls in the CoFe/CoO sample were more conformal and mobile in response to changing fields. Possible structural origins for the wide variation in coercivity obtained with different substrates, deposition temperature, and thickness of CoFe films are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0001072025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001072025&partnerID=8YFLogxK

M3 - Article

VL - 88

SP - 2058

EP - 2062

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -