Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell

Kunal Ghosh, Stanislau Herasimenka, Bill Dauksher, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed balance calculations with the lifetime curve to determine the limiting performance of silicon heterostructure solar cell. The detailed balance model uses the state-of-the-art values for the recombination coefficients. The calculation shows that for an undoped silicon with only intrinsic (radiative and auger) recombination mechanisms considered, the efficiency limit is 29.63 % at 26 μm. However, the value changes with the inclusion of the extrinsic recombination processes that occurs due to the presence of surfaces and defects within crystalline silicon.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1232-1237
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Amorphous silicon
Heterojunctions
Solar cells
Crystalline materials
Silicon
Thermodynamics
Defects

Keywords

  • A-Si/c-Si heterostructure
  • Detailed balance
  • Efficiency limit
  • Lifetime measurement

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Ghosh, K., Herasimenka, S., Dauksher, B., & Bowden, S. (2013). Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1232-1237). [6744363] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744363

Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell. / Ghosh, Kunal; Herasimenka, Stanislau; Dauksher, Bill; Bowden, Stuart.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1232-1237 6744363.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ghosh, K, Herasimenka, S, Dauksher, B & Bowden, S 2013, Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744363, Institute of Electrical and Electronics Engineers Inc., pp. 1232-1237, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744363
Ghosh K, Herasimenka S, Dauksher B, Bowden S. Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1232-1237. 6744363 https://doi.org/10.1109/PVSC.2013.6744363
Ghosh, Kunal ; Herasimenka, Stanislau ; Dauksher, Bill ; Bowden, Stuart. / Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1232-1237
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