Correlated structural and optical characterization of ammonothermally grown bulk GaN

J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, Brian Skromme, L. Chen, P. J. Hartlieb, E. Michaels, J. W. Kolis

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Abstract

Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.

Original languageEnglish (US)
Pages (from-to)3289-3291
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
StatePublished - Apr 26 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B., Chen, L., Hartlieb, P. J., Michaels, E., & Kolis, J. W. (2004). Correlated structural and optical characterization of ammonothermally grown bulk GaN. Applied Physics Letters, 84(17), 3289-3291. https://doi.org/10.1063/1.1715154