Correlated structural and optical characterization of ammonothermally grown bulk GaN

J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, Brian Skromme, L. Chen, P. J. Hartlieb, E. Michaels, J. W. Kolis

Research output: Contribution to journalArticle

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Abstract

Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.

Original languageEnglish (US)
Pages (from-to)3289-3291
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
StatePublished - Apr 26 2004

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photoluminescence
crystal defects
transmission electron microscopy
crystals
topography
synchrotrons
quantum wells
occurrences
defects
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B., Chen, L., ... Kolis, J. W. (2004). Correlated structural and optical characterization of ammonothermally grown bulk GaN. Applied Physics Letters, 84(17), 3289-3291. https://doi.org/10.1063/1.1715154

Correlated structural and optical characterization of ammonothermally grown bulk GaN. / Bai, J.; Dudley, M.; Raghothamachar, B.; Gouma, P.; Skromme, Brian; Chen, L.; Hartlieb, P. J.; Michaels, E.; Kolis, J. W.

In: Applied Physics Letters, Vol. 84, No. 17, 26.04.2004, p. 3289-3291.

Research output: Contribution to journalArticle

Bai, J, Dudley, M, Raghothamachar, B, Gouma, P, Skromme, B, Chen, L, Hartlieb, PJ, Michaels, E & Kolis, JW 2004, 'Correlated structural and optical characterization of ammonothermally grown bulk GaN', Applied Physics Letters, vol. 84, no. 17, pp. 3289-3291. https://doi.org/10.1063/1.1715154
Bai, J. ; Dudley, M. ; Raghothamachar, B. ; Gouma, P. ; Skromme, Brian ; Chen, L. ; Hartlieb, P. J. ; Michaels, E. ; Kolis, J. W. / Correlated structural and optical characterization of ammonothermally grown bulk GaN. In: Applied Physics Letters. 2004 ; Vol. 84, No. 17. pp. 3289-3291.
@article{82960c29b5d14fc380ff7d43e3c01891,
title = "Correlated structural and optical characterization of ammonothermally grown bulk GaN",
abstract = "Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.",
author = "J. Bai and M. Dudley and B. Raghothamachar and P. Gouma and Brian Skromme and L. Chen and Hartlieb, {P. J.} and E. Michaels and Kolis, {J. W.}",
year = "2004",
month = "4",
day = "26",
doi = "10.1063/1.1715154",
language = "English (US)",
volume = "84",
pages = "3289--3291",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Correlated structural and optical characterization of ammonothermally grown bulk GaN

AU - Bai, J.

AU - Dudley, M.

AU - Raghothamachar, B.

AU - Gouma, P.

AU - Skromme, Brian

AU - Chen, L.

AU - Hartlieb, P. J.

AU - Michaels, E.

AU - Kolis, J. W.

PY - 2004/4/26

Y1 - 2004/4/26

N2 - Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.

AB - Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.

UR - http://www.scopus.com/inward/record.url?scp=2542432212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2542432212&partnerID=8YFLogxK

U2 - 10.1063/1.1715154

DO - 10.1063/1.1715154

M3 - Article

AN - SCOPUS:2542432212

VL - 84

SP - 3289

EP - 3291

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -