Abstract
Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.
Original language | English (US) |
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Pages (from-to) | 3289-3291 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 17 |
DOIs | |
State | Published - Apr 26 2004 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)