Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs

Dragica Vasileska, W. J. Gross, V. Kafedziski, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

Original languageEnglish (US)
Pages (from-to)301-305
Number of pages5
JournalVLSI Design
Volume8
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • Bi-CGSTAB method
  • Device modeling
  • Discrete impurities
  • Semiconductor devices
  • Subthreshold conduction

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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