Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs

Dragica Vasileska; W. J. Gross; V. Kafedziski; D. K. Ferry

doi:10.1155/1998/21494

Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs

Dragica Vasileska, W. J. Gross, V. Kafedziski, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

Original language	English (US)
Pages (from-to)	301-305
Number of pages	5
Journal	VLSI Design
Volume	8
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/21494
State	Published - 1998

Keywords

Bi-CGSTAB method
Device modeling
Discrete impurities
Semiconductor devices
Subthreshold conduction

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1155/1998/21494

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title = "Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs",

abstract = "As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.",

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T1 - Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs

AU - Vasileska, Dragica

AU - Gross, W. J.

AU - Kafedziski, V.

AU - Ferry, D. K.

PY - 1998

Y1 - 1998

N2 - As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

AB - As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

KW - Bi-CGSTAB method

KW - Device modeling

KW - Discrete impurities

KW - Semiconductor devices

KW - Subthreshold conduction

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Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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