Controlling Silicon Bottom Cell Lifetime Variance in II-VI/Si Tandems

Kevin D. Tyler, Madhan K. Arulanandam, Ramesh Pandey, Niranjana Mohan Kumar, Jennifer Drayton, James Sites, Richard R. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


An intricate look is taken at the methods used to account for variance in minority-carrier lifetime in the silicon bottom cell of II-VI/Si tandem solar cells. A discussion on the modeling is provided. Lateral wafer variance is determined to be much less than wafer-to-wafer variance. Size testing indicates a minimum size of 4 × 4 cm is necessary for accurate results. The cleaning procedure and photoluminescence testing is described. Despite a small sample size, Si samples with CdTe deposition and CdCl2 treatment maintain over 1 ms lifetimes, enabling the Si bottom cell in II-VI/Si tandem cells to reach state-of-the-art performance.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728104942
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States


  • II-VI
  • IZO
  • cadmium telluride
  • minority-carrier lifetime
  • multijunction
  • tandem

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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