Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

Hongmei Luo, Guifu Zou, Haiyan Wang, Joon Hwan Lee, Yuan Lin, Huisheng Peng, Qianglu Lin, Shuguang Deng, Eve Bauer, T. Mark McCleskey, Anthony K. Burrell, Quanxi Jia

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al 2O3) but cubic Mo2N on (001) SrTiO3 even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)MoN||(0001) Al2O3 and [101̄0]MoN||[112̄0]Al2O3 for MoN on c-cut Al2O3 and (001)Mo2N||(001) STO and [111]Mo2N||[111]STO for Mo2N on SrTiO3. The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo2N.

Original languageEnglish (US)
Pages (from-to)17880-17883
Number of pages4
JournalJournal of Physical Chemistry C
Volume115
Issue number36
DOIs
StatePublished - Sep 15 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Luo, H., Zou, G., Wang, H., Lee, J. H., Lin, Y., Peng, H., Lin, Q., Deng, S., Bauer, E., McCleskey, T. M., Burrell, A. K., & Jia, Q. (2011). Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization. Journal of Physical Chemistry C, 115(36), 17880-17883. https://doi.org/10.1021/jp2048376