Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

Hongmei Luo; Guifu Zou; Haiyan Wang; Joon Hwan Lee; Yuan Lin; Huisheng Peng; Qianglu Lin; Shuguang Deng; Eve Bauer; T. Mark McCleskey; Anthony K. Burrell; Quanxi Jia

doi:10.1021/jp2048376

Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

Hongmei Luo, Guifu Zou, Haiyan Wang, Joon Hwan Lee, Yuan Lin, Huisheng Peng, Qianglu Lin, Shuguang Deng, Eve Bauer, T. Mark McCleskey, Anthony K. Burrell, Quanxi Jia

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al ₂O₃) but cubic Mo₂N on (001) SrTiO₃ even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)_MoN||(0001) _Al2O3 and [101̄0]_MoN||[112̄0]_Al2O3 for MoN on c-cut Al₂O₃ and (001)_Mo2N||(001) _STO and [111]_Mo2N||[111]_STO for Mo₂N on SrTiO₃. The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo₂N.

Original language	English (US)
Pages (from-to)	17880-17883
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	115
Issue number	36
DOIs	https://doi.org/10.1021/jp2048376
State	Published - Sep 15 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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@article{667bb4b5877c450782d856a13f361e6a,

title = "Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization",

abstract = "Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al 2O3) but cubic Mo2N on (001) SrTiO3 even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)MoN||(0001) Al2O3 and [10{\=1}0]MoN||[11{\=2}0]Al2O3 for MoN on c-cut Al2O3 and (001)Mo2N||(001) STO and [111]Mo2N||[111]STO for Mo2N on SrTiO3. The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo2N.",

author = "Hongmei Luo and Guifu Zou and Haiyan Wang and Lee, {Joon Hwan} and Yuan Lin and Huisheng Peng and Qianglu Lin and Shuguang Deng and Eve Bauer and McCleskey, {T. Mark} and Burrell, {Anthony K.} and Quanxi Jia",

year = "2011",

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day = "15",

doi = "10.1021/jp2048376",

language = "English (US)",

volume = "115",

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journal = "Journal of Physical Chemistry C",

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T1 - Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

AU - Luo, Hongmei

AU - Zou, Guifu

AU - Wang, Haiyan

AU - Lee, Joon Hwan

AU - Lin, Yuan

AU - Peng, Huisheng

AU - Lin, Qianglu

AU - Deng, Shuguang

AU - Bauer, Eve

AU - McCleskey, T. Mark

AU - Burrell, Anthony K.

AU - Jia, Quanxi

PY - 2011/9/15

Y1 - 2011/9/15

N2 - Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al 2O3) but cubic Mo2N on (001) SrTiO3 even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)MoN||(0001) Al2O3 and [101̄0]MoN||[112̄0]Al2O3 for MoN on c-cut Al2O3 and (001)Mo2N||(001) STO and [111]Mo2N||[111]STO for Mo2N on SrTiO3. The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo2N.

AB - Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al 2O3) but cubic Mo2N on (001) SrTiO3 even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)MoN||(0001) Al2O3 and [101̄0]MoN||[112̄0]Al2O3 for MoN on c-cut Al2O3 and (001)Mo2N||(001) STO and [111]Mo2N||[111]STO for Mo2N on SrTiO3. The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo2N.

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Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

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