CONTROL OF WIDTH EFFECTS IN SMALL GEOMETRY CMOS DEVICES.

A. Buttar, J. Robertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Process simulation is particularly appropriate to production control in CMOS IC fabrication. The process complexity and the divergent characteristics of the two transistor types make optimisation of their performance difficult. Simulation provides a fast route to test compromises in process specifications. This paper presents a process simulation of small geometry (2 mu m) CMOS devices. Previous studies on narrow width effects in MOS transistors have concentrated on NMOS or N-well CMOS technologies. The present work concentrates specifically on width effects in a P-well CMOS process where diffusion of both the field implant and the P-well must be modelled during field oxidation. The simulation results allow the effective channel width of the MOS transistor to be determined.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherPineridge Press
Pages368-377
Number of pages10
ISBN (Print)0906674387
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Buttar, A., & Robertson, J. (1984). CONTROL OF WIDTH EFFECTS IN SMALL GEOMETRY CMOS DEVICES. In Unknown Host Publication Title (pp. 368-377). Pineridge Press.