Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si_{1 -x-y}Ge_xC_y alloys on Si

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Superlattices 80%
• Crystallinity 78%
• Transmission electron microscopy 66%
• Chemical analysis 41%
• Rutherford backscattering spectroscopy 39%
• Secondary ion mass spectrometry 32%
• Ion beams 30%
• Spectrometry 28%
• Mass spectrometry 27%
• X ray diffraction 21%
• Defects 14%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Crystallinity 49%
• Alloy 45%
• Superlattice 44%
• Transmission Electron Microscopy 42%
• Strain 30%
• Rutherford Backscattering Spectroscopy 27%
• Ion Beam 23%
• Secondary Ion Mass Spectroscopy 23%
• Tension 20%
• Surface 6%

Physics & Astronomy

• crystallinity 57%
• molecular beam epitaxy 54%
• transmission electron microscopy 31%
• superlattices 30%
• secondary ion mass spectrometry 16%
• mass spectroscopy 15%
• backscattering 14%
• ion beams 12%
• wafers 12%
• high resolution 9%
• defects 8%
• diffraction 8%
• spectroscopy 8%
• x rays 7%