Control of bismuth volatility in SBT by vanadium doping

Robert Barz, Deborah A. Neumayer, Prashant Majhi, Changgong Wang, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The volatility of bismuth (Bi) presents difficulty in the integration of ferroelectric strontium bismuth tantalate (SrBi2Ta2O9 or SBT) thin films for FeRAM applications. This paper presents preliminary results indicating that the Bi volatility problem may be controlled by the addition of vanadium (V) to SBT. A series of V-doped SBT films (150 nm), of a nominal composition SrBi2.2(Ta1-xVx)2O9 with x = 0, 0.01, and 0.07, were deposited on Pt/SiO2/Si wafers by sol-gel processing. XRD and SEM revealed a polycrystalline morphology and a vanadium solubility in SBT of at least 7%. SBT with 7% V-doping exhibited little structural damage from a forming gas anneal. 7% V-doping also limited Bi diffusion into Pt bottom electrodes and increased the surface Bi 4f7/2 electron binding energies. The ferroelectric and polarization fatigue properties did not improve with V-doping, which was attributed to oxygen vacancy formation due to acceptor doping. Vanadium stabilized Bi in the SBT matrix by reducing from the pentavalent to the tetravalent state, which provided the free energy to either oxidize bismuth or prevent the reduction of bismuth.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages61-71
Number of pages11
Volume39
Edition1-4
DOIs
StatePublished - 2001
Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
Duration: Mar 11 2006Mar 14 2006

Other

Other13th International Symposium on Integrated Ferroelectrics
CountryUnited States
CityColorado Springs, CO
Period3/11/063/14/06

Fingerprint

Vanadium
Bismuth
volatility
vanadium
bismuth
Doping (additives)
Ferroelectric materials
Strontium
Oxygen vacancies
Binding energy
strontium
Free energy
Sol-gels
solubility
Solubility
binding energy
Gases
free energy
Fatigue of materials
wafers

Keywords

  • Bi volatility
  • Forming gas anneal
  • SBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Barz, R., Neumayer, D. A., Majhi, P., Wang, C., & Dey, S. (2001). Control of bismuth volatility in SBT by vanadium doping. In Integrated Ferroelectrics (1-4 ed., Vol. 39, pp. 61-71) https://doi.org/10.1080/10584580108011928

Control of bismuth volatility in SBT by vanadium doping. / Barz, Robert; Neumayer, Deborah A.; Majhi, Prashant; Wang, Changgong; Dey, Sandwip.

Integrated Ferroelectrics. Vol. 39 1-4. ed. 2001. p. 61-71.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Barz, R, Neumayer, DA, Majhi, P, Wang, C & Dey, S 2001, Control of bismuth volatility in SBT by vanadium doping. in Integrated Ferroelectrics. 1-4 edn, vol. 39, pp. 61-71, 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, United States, 3/11/06. https://doi.org/10.1080/10584580108011928
Barz R, Neumayer DA, Majhi P, Wang C, Dey S. Control of bismuth volatility in SBT by vanadium doping. In Integrated Ferroelectrics. 1-4 ed. Vol. 39. 2001. p. 61-71 https://doi.org/10.1080/10584580108011928
Barz, Robert ; Neumayer, Deborah A. ; Majhi, Prashant ; Wang, Changgong ; Dey, Sandwip. / Control of bismuth volatility in SBT by vanadium doping. Integrated Ferroelectrics. Vol. 39 1-4. ed. 2001. pp. 61-71
@inproceedings{2f20e95492d2400fa6aa6ebf181d5761,
title = "Control of bismuth volatility in SBT by vanadium doping",
abstract = "The volatility of bismuth (Bi) presents difficulty in the integration of ferroelectric strontium bismuth tantalate (SrBi2Ta2O9 or SBT) thin films for FeRAM applications. This paper presents preliminary results indicating that the Bi volatility problem may be controlled by the addition of vanadium (V) to SBT. A series of V-doped SBT films (150 nm), of a nominal composition SrBi2.2(Ta1-xVx)2O9 with x = 0, 0.01, and 0.07, were deposited on Pt/SiO2/Si wafers by sol-gel processing. XRD and SEM revealed a polycrystalline morphology and a vanadium solubility in SBT of at least 7{\%}. SBT with 7{\%} V-doping exhibited little structural damage from a forming gas anneal. 7{\%} V-doping also limited Bi diffusion into Pt bottom electrodes and increased the surface Bi 4f7/2 electron binding energies. The ferroelectric and polarization fatigue properties did not improve with V-doping, which was attributed to oxygen vacancy formation due to acceptor doping. Vanadium stabilized Bi in the SBT matrix by reducing from the pentavalent to the tetravalent state, which provided the free energy to either oxidize bismuth or prevent the reduction of bismuth.",
keywords = "Bi volatility, Forming gas anneal, SBT",
author = "Robert Barz and Neumayer, {Deborah A.} and Prashant Majhi and Changgong Wang and Sandwip Dey",
year = "2001",
doi = "10.1080/10584580108011928",
language = "English (US)",
volume = "39",
pages = "61--71",
booktitle = "Integrated Ferroelectrics",
edition = "1-4",

}

TY - GEN

T1 - Control of bismuth volatility in SBT by vanadium doping

AU - Barz, Robert

AU - Neumayer, Deborah A.

AU - Majhi, Prashant

AU - Wang, Changgong

AU - Dey, Sandwip

PY - 2001

Y1 - 2001

N2 - The volatility of bismuth (Bi) presents difficulty in the integration of ferroelectric strontium bismuth tantalate (SrBi2Ta2O9 or SBT) thin films for FeRAM applications. This paper presents preliminary results indicating that the Bi volatility problem may be controlled by the addition of vanadium (V) to SBT. A series of V-doped SBT films (150 nm), of a nominal composition SrBi2.2(Ta1-xVx)2O9 with x = 0, 0.01, and 0.07, were deposited on Pt/SiO2/Si wafers by sol-gel processing. XRD and SEM revealed a polycrystalline morphology and a vanadium solubility in SBT of at least 7%. SBT with 7% V-doping exhibited little structural damage from a forming gas anneal. 7% V-doping also limited Bi diffusion into Pt bottom electrodes and increased the surface Bi 4f7/2 electron binding energies. The ferroelectric and polarization fatigue properties did not improve with V-doping, which was attributed to oxygen vacancy formation due to acceptor doping. Vanadium stabilized Bi in the SBT matrix by reducing from the pentavalent to the tetravalent state, which provided the free energy to either oxidize bismuth or prevent the reduction of bismuth.

AB - The volatility of bismuth (Bi) presents difficulty in the integration of ferroelectric strontium bismuth tantalate (SrBi2Ta2O9 or SBT) thin films for FeRAM applications. This paper presents preliminary results indicating that the Bi volatility problem may be controlled by the addition of vanadium (V) to SBT. A series of V-doped SBT films (150 nm), of a nominal composition SrBi2.2(Ta1-xVx)2O9 with x = 0, 0.01, and 0.07, were deposited on Pt/SiO2/Si wafers by sol-gel processing. XRD and SEM revealed a polycrystalline morphology and a vanadium solubility in SBT of at least 7%. SBT with 7% V-doping exhibited little structural damage from a forming gas anneal. 7% V-doping also limited Bi diffusion into Pt bottom electrodes and increased the surface Bi 4f7/2 electron binding energies. The ferroelectric and polarization fatigue properties did not improve with V-doping, which was attributed to oxygen vacancy formation due to acceptor doping. Vanadium stabilized Bi in the SBT matrix by reducing from the pentavalent to the tetravalent state, which provided the free energy to either oxidize bismuth or prevent the reduction of bismuth.

KW - Bi volatility

KW - Forming gas anneal

KW - SBT

UR - http://www.scopus.com/inward/record.url?scp=4344695522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344695522&partnerID=8YFLogxK

U2 - 10.1080/10584580108011928

DO - 10.1080/10584580108011928

M3 - Conference contribution

AN - SCOPUS:4344695522

VL - 39

SP - 61

EP - 71

BT - Integrated Ferroelectrics

ER -