Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides

Model and experimental results

V. Pacradouni, R. Morin, M. Kanskar, Jeff F. Young, Shane Johnson, T. Tiedje

Research output: Contribution to journalReview article

Abstract

High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ∼ 175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of AlxGa1-xAs and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.

Original languageEnglish (US)
Pages (from-to)6039-6044
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number10
DOIs
StatePublished - Nov 15 1996
Externally publishedYes

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aluminum gallium arsenides
quantum wells
waveguides
oscillator strengths
spacing
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides : Model and experimental results. / Pacradouni, V.; Morin, R.; Kanskar, M.; Young, Jeff F.; Johnson, Shane; Tiedje, T.

In: Journal of Applied Physics, Vol. 80, No. 10, 15.11.1996, p. 6039-6044.

Research output: Contribution to journalReview article

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