Contribution of a single strained-layer InGaAs quantum well to the anisotropic group velocity dispersion of GRINSCH waveguides: experiment and model results

R. Morin, V. Pacradouni, M. Kanskar, Jeff F. Young, Shane Johnson, T. Tiedje

Research output: Contribution to journalConference article

Abstract

The group velocity dispersion (GVD) of GaAs/AlGaAs GRINSCH waveguide structures containing single, strained InGaAs quantum wells at their centers was measured. Measurements were done for both TE and TM polarizations over a broad spectral range by fitting the Fabry-Perot fringes in transmission spectra recorded by a high-resolution Fourier Transform spectrometer. Overall, the results demonstrate the importance of including realistic two-dimensional polarization- and wavelength-dependent dielectric function models in waveguide dispersion calculations, even when there is only a single 7-nm-wide quantum well in the structure.

Original languageEnglish (US)
Number of pages1
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

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Group velocity dispersion
Semiconductor quantum wells
Waveguides
Polarization
Spectrometers
Fourier transforms
Experiments
Wavelength
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Contribution of a single strained-layer InGaAs quantum well to the anisotropic group velocity dispersion of GRINSCH waveguides: experiment and model results",
abstract = "The group velocity dispersion (GVD) of GaAs/AlGaAs GRINSCH waveguide structures containing single, strained InGaAs quantum wells at their centers was measured. Measurements were done for both TE and TM polarizations over a broad spectral range by fitting the Fabry-Perot fringes in transmission spectra recorded by a high-resolution Fourier Transform spectrometer. Overall, the results demonstrate the importance of including realistic two-dimensional polarization- and wavelength-dependent dielectric function models in waveguide dispersion calculations, even when there is only a single 7-nm-wide quantum well in the structure.",
author = "R. Morin and V. Pacradouni and M. Kanskar and Young, {Jeff F.} and Shane Johnson and T. Tiedje",
year = "1996",
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T1 - Contribution of a single strained-layer InGaAs quantum well to the anisotropic group velocity dispersion of GRINSCH waveguides

T2 - experiment and model results

AU - Morin, R.

AU - Pacradouni, V.

AU - Kanskar, M.

AU - Young, Jeff F.

AU - Johnson, Shane

AU - Tiedje, T.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The group velocity dispersion (GVD) of GaAs/AlGaAs GRINSCH waveguide structures containing single, strained InGaAs quantum wells at their centers was measured. Measurements were done for both TE and TM polarizations over a broad spectral range by fitting the Fabry-Perot fringes in transmission spectra recorded by a high-resolution Fourier Transform spectrometer. Overall, the results demonstrate the importance of including realistic two-dimensional polarization- and wavelength-dependent dielectric function models in waveguide dispersion calculations, even when there is only a single 7-nm-wide quantum well in the structure.

AB - The group velocity dispersion (GVD) of GaAs/AlGaAs GRINSCH waveguide structures containing single, strained InGaAs quantum wells at their centers was measured. Measurements were done for both TE and TM polarizations over a broad spectral range by fitting the Fabry-Perot fringes in transmission spectra recorded by a high-resolution Fourier Transform spectrometer. Overall, the results demonstrate the importance of including realistic two-dimensional polarization- and wavelength-dependent dielectric function models in waveguide dispersion calculations, even when there is only a single 7-nm-wide quantum well in the structure.

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