Continuous wave operation of InAs/InAsxSb1-x midinfrared lasers

Yong Hang Zhang

doi:10.1063/1.113535

Continuous wave operation of InAs/InAs_xSb_1-x midinfrared lasers

Yong Hang Zhang

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength range, even beyond the narrowest band gap of any natural antimonide semiconductor alloys. This letter reports the first InAs/InAs_xSb_1-x type-II SL lasers with cw, optically pumped operation up to 95 K. The stimulated emission results from spatially indirect transitions of relatively extended electron states in the InAs/InAs_xSb_1-x SL conduction band to the hole states that are localized in the InAs_x Sb_1-x layers. The lasing wavelength is around 3.3-3.4 μm. Equivalent threshold current densities are estimated to be 3.3 and 56 A/cm² at sample temperatures of 5 and 95 K, respectively. The characteristic temperature (T₀) is approximately 32 K. These results demonstrate that the InAs/InAs_xSb_1-x type-II SL clad by AlAs_0.16Sb_0.84 ordered-alloy layers is a promising material system for midwave infrared semiconductor lasers.

Original language	English (US)
Pages (from-to)	118
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113535
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Continuous wave operation of InAs/InAsxSb1-x midinfrared lasers",

abstract = "Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength range, even beyond the narrowest band gap of any natural antimonide semiconductor alloys. This letter reports the first InAs/InAsxSb1-x type-II SL lasers with cw, optically pumped operation up to 95 K. The stimulated emission results from spatially indirect transitions of relatively extended electron states in the InAs/InAsxSb1-x SL conduction band to the hole states that are localized in the InAsx Sb1-x layers. The lasing wavelength is around 3.3-3.4 μm. Equivalent threshold current densities are estimated to be 3.3 and 56 A/cm2 at sample temperatures of 5 and 95 K, respectively. The characteristic temperature (T0) is approximately 32 K. These results demonstrate that the InAs/InAsxSb1-x type-II SL clad by AlAs0.16Sb0.84 ordered-alloy layers is a promising material system for midwave infrared semiconductor lasers.",

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N2 - Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength range, even beyond the narrowest band gap of any natural antimonide semiconductor alloys. This letter reports the first InAs/InAsxSb1-x type-II SL lasers with cw, optically pumped operation up to 95 K. The stimulated emission results from spatially indirect transitions of relatively extended electron states in the InAs/InAsxSb1-x SL conduction band to the hole states that are localized in the InAsx Sb1-x layers. The lasing wavelength is around 3.3-3.4 μm. Equivalent threshold current densities are estimated to be 3.3 and 56 A/cm2 at sample temperatures of 5 and 95 K, respectively. The characteristic temperature (T0) is approximately 32 K. These results demonstrate that the InAs/InAsxSb1-x type-II SL clad by AlAs0.16Sb0.84 ordered-alloy layers is a promising material system for midwave infrared semiconductor lasers.

AB - Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength range, even beyond the narrowest band gap of any natural antimonide semiconductor alloys. This letter reports the first InAs/InAsxSb1-x type-II SL lasers with cw, optically pumped operation up to 95 K. The stimulated emission results from spatially indirect transitions of relatively extended electron states in the InAs/InAsxSb1-x SL conduction band to the hole states that are localized in the InAsx Sb1-x layers. The lasing wavelength is around 3.3-3.4 μm. Equivalent threshold current densities are estimated to be 3.3 and 56 A/cm2 at sample temperatures of 5 and 95 K, respectively. The characteristic temperature (T0) is approximately 32 K. These results demonstrate that the InAs/InAsxSb1-x type-II SL clad by AlAs0.16Sb0.84 ordered-alloy layers is a promising material system for midwave infrared semiconductor lasers.

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Continuous wave operation of InAs/InAs_xSb_1-x midinfrared lasers

Abstract

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