Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Yoshikazu Takeda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In0.11Ga0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness hc(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness hc(r) of the In0.11Ga0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness hc and the experimental hc(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.

Original languageEnglish (US)
Pages (from-to)68-73
Number of pages6
JournalJournal of Crystal Growth
Volume407
DOIs
StatePublished - Dec 1 2014
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Epitaxial growth
vapor phase epitaxy
Epilayers
reflectance
X rays
x rays
Aluminum Oxide
Diffractometers
curves
diffractometers
Sapphire
Semiconductor quantum wells
grade
sapphire
templates
quantum wells

Keywords

  • At growth temperature
  • In situ monitoring
  • InGaN
  • Metalorganic vapor phase epitaxy
  • Quantum wells
  • X-ray reflectivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy. / Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Amano, Hiroshi; Takeda, Yoshikazu.

In: Journal of Crystal Growth, Vol. 407, 01.12.2014, p. 68-73.

Research output: Contribution to journalArticle

Ju, Guangxu ; Fuchi, Shingo ; Tabuchi, Masao ; Amano, Hiroshi ; Takeda, Yoshikazu. / Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy. In: Journal of Crystal Growth. 2014 ; Vol. 407. pp. 68-73.
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AU - Takeda, Yoshikazu

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