Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Yoshikazu Takeda

Research output: Contribution to journalArticle

5 Scopus citations


Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In0.11Ga0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness hc(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness hc(r) of the In0.11Ga0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness hc and the experimental hc(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.

Original languageEnglish (US)
Pages (from-to)68-73
Number of pages6
JournalJournal of Crystal Growth
StatePublished - Dec 1 2014



  • At growth temperature
  • In situ monitoring
  • InGaN
  • Metalorganic vapor phase epitaxy
  • Quantum wells
  • X-ray reflectivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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