Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Guangxu Ju; Shingo Fuchi; Masao Tabuchi; Hiroshi Amano; Yoshikazu Takeda

doi:10.1016/j.jcrysgro.2014.08.023

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Yoshikazu Takeda

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In_0.11Ga_0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness h_c(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness h_c(r) of the In_0.11Ga_0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness h_c and the experimental h_c(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.

Original language	English (US)
Pages (from-to)	68-73
Number of pages	6
Journal	Journal of Crystal Growth
Volume	407
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.08.023
State	Published - Dec 1 2014
Externally published	Yes

Keywords

At growth temperature
In situ monitoring
InGaN
Metalorganic vapor phase epitaxy
Quantum wells
X-ray reflectivity

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2014.08.023

Cite this

@article{cbb6de1b212544baacae204069243811,

title = "Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy",

abstract = "Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In0.11Ga0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness hc(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness hc(r) of the In0.11Ga0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness hc and the experimental hc(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.",

keywords = "At growth temperature, In situ monitoring, InGaN, Metalorganic vapor phase epitaxy, Quantum wells, X-ray reflectivity",

author = "Guangxu Ju and Shingo Fuchi and Masao Tabuchi and Hiroshi Amano and Yoshikazu Takeda",

note = "Funding Information: This work was supported in part by the Grant-in-Aid for Scientific Research (S) # 18106001 from the Japan Society for the Promotion of Science and partially supported by the New Energy and Industrial Development Organization (NEDO) . The use of the Synchrotron Radiation at Nagoya was supported by Aichi Science and Technology Foundation . Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2014.08.023",

language = "English (US)",

volume = "407",

pages = "68--73",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

AU - Ju, Guangxu

AU - Fuchi, Shingo

AU - Tabuchi, Masao

AU - Amano, Hiroshi

AU - Takeda, Yoshikazu

N1 - Funding Information: This work was supported in part by the Grant-in-Aid for Scientific Research (S) # 18106001 from the Japan Society for the Promotion of Science and partially supported by the New Energy and Industrial Development Organization (NEDO) . The use of the Synchrotron Radiation at Nagoya was supported by Aichi Science and Technology Foundation . Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In0.11Ga0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness hc(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness hc(r) of the In0.11Ga0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness hc and the experimental hc(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.

AB - Continuous in situ X-ray reflectivity (XRR) measurements were used to investigate the growth process of an In0.11Ga0.89N epilayer and its single quantum well grown on c-plane GaN/sapphire templates using an in-house-designed metalorganic vapor phase epitaxy installed in a laboratory-grade X-ray diffractometer. The surface roughening of the epilayer as a function of growth time was calculated from the continuous in situ XRR curve. The growth rate, critical thickness hc(r) for surface roughening, and roughening rate were obtained. The experimental critical thickness hc(r) of the In0.11Ga0.89N epilayer analyzed from the continuous in situ XRR curve was 14.8±0.4 nm. Based on the calculated theoretical critical thickness hc and the experimental hc(r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.

KW - At growth temperature

KW - In situ monitoring

KW - InGaN

KW - Metalorganic vapor phase epitaxy

KW - Quantum wells

KW - X-ray reflectivity

UR - http://www.scopus.com/inward/record.url?scp=84908284785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908284785&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.08.023

DO - 10.1016/j.jcrysgro.2014.08.023

M3 - Article

AN - SCOPUS:84908284785

SN - 0022-0248

VL - 407

SP - 68

EP - 73

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this