CONTACT RESISTANCE OF SILICON-POLYSILICON INTERCONNECTION FOR DIFFERENT CURRENT-FLOW GEOMETRIES.

A. J. Walton, R. Holwill, J. M. Robertson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The relationship between contact window dimensions, specific contact resistivity p//c and sheet resistance on contact resistance has been investigated for different current-flow geometries. It is shown that as the window size is reduced, p//c starts to become the dominant factor giving contact resistances independent of the direction of current flow.

Original languageEnglish (US)
Pages (from-to)13-14
Number of pages2
JournalElectronics Letters
Volume21
Issue number1
StatePublished - Jan 3 1985
Externally publishedYes

Fingerprint

Contact resistance
Polysilicon
Silicon
Geometry
Sheet resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

CONTACT RESISTANCE OF SILICON-POLYSILICON INTERCONNECTION FOR DIFFERENT CURRENT-FLOW GEOMETRIES. / Walton, A. J.; Holwill, R.; Robertson, J. M.

In: Electronics Letters, Vol. 21, No. 1, 03.01.1985, p. 13-14.

Research output: Contribution to journalArticle

Walton, AJ, Holwill, R & Robertson, JM 1985, 'CONTACT RESISTANCE OF SILICON-POLYSILICON INTERCONNECTION FOR DIFFERENT CURRENT-FLOW GEOMETRIES.', Electronics Letters, vol. 21, no. 1, pp. 13-14.
Walton, A. J. ; Holwill, R. ; Robertson, J. M. / CONTACT RESISTANCE OF SILICON-POLYSILICON INTERCONNECTION FOR DIFFERENT CURRENT-FLOW GEOMETRIES. In: Electronics Letters. 1985 ; Vol. 21, No. 1. pp. 13-14.
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