Conformality of SiO 2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor deposition

Gregory Raupp, Dimitri A. Levedakis, Timothy S. Cale

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The dependences of silicon dioxide step coverage in micron-scale trenches on substrate temperature, total pressure, absorbed microwave power, and O 2:tetraethoxysilane (TEOS) flow ratio were investigated in a remote plasma configuration in which oxygen is excited upstream of the deposition chamber in a microwave glow discharge. Of the independent parameters investigated, temperature has the strongest effect on conformality. Conformality degrades modestly with decreasing pressure and increasing O 2:TEOS flow ratio, but is nearly independent of absorbed microwave power. Step coverage degrades significantly with increasing temperature; for example, step coverage in a long rectangular trench of aspect ratio 2 is greater than 90 at 250°C, but less than 40 at 400°C at otherwise fixed conditions. We attribute this behavior to a thermally activated oxygen-atom recombination reaction on the growing silicon dioxide surface, that consumes reactive oxygen and leads to larger gradients in oxygen atom flux in the feature as temperature is increased.

Original languageEnglish (US)
Pages (from-to)676-680
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - 1995

Fingerprint

Plasma enhanced chemical vapor deposition
Microwaves
vapor deposition
Oxygen
microwaves
Polymers
Silicon Dioxide
oxygen atoms
Silica
silicon dioxide
Atoms
recombination reactions
Temperature
temperature
Glow discharges
oxygen
glow discharges
upstream
aspect ratio
Aspect ratio

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Conformality of SiO 2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor deposition. / Raupp, Gregory; Levedakis, Dimitri A.; Cale, Timothy S.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 13, No. 3, 1995, p. 676-680.

Research output: Contribution to journalArticle

@article{73eafac24c8346c88354ada0892c5abb,
title = "Conformality of SiO 2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor deposition",
abstract = "The dependences of silicon dioxide step coverage in micron-scale trenches on substrate temperature, total pressure, absorbed microwave power, and O 2:tetraethoxysilane (TEOS) flow ratio were investigated in a remote plasma configuration in which oxygen is excited upstream of the deposition chamber in a microwave glow discharge. Of the independent parameters investigated, temperature has the strongest effect on conformality. Conformality degrades modestly with decreasing pressure and increasing O 2:TEOS flow ratio, but is nearly independent of absorbed microwave power. Step coverage degrades significantly with increasing temperature; for example, step coverage in a long rectangular trench of aspect ratio 2 is greater than 90 at 250°C, but less than 40 at 400°C at otherwise fixed conditions. We attribute this behavior to a thermally activated oxygen-atom recombination reaction on the growing silicon dioxide surface, that consumes reactive oxygen and leads to larger gradients in oxygen atom flux in the feature as temperature is increased.",
author = "Gregory Raupp and Levedakis, {Dimitri A.} and Cale, {Timothy S.}",
year = "1995",
doi = "10.1116/1.579806",
language = "English (US)",
volume = "13",
pages = "676--680",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Conformality of SiO 2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor deposition

AU - Raupp, Gregory

AU - Levedakis, Dimitri A.

AU - Cale, Timothy S.

PY - 1995

Y1 - 1995

N2 - The dependences of silicon dioxide step coverage in micron-scale trenches on substrate temperature, total pressure, absorbed microwave power, and O 2:tetraethoxysilane (TEOS) flow ratio were investigated in a remote plasma configuration in which oxygen is excited upstream of the deposition chamber in a microwave glow discharge. Of the independent parameters investigated, temperature has the strongest effect on conformality. Conformality degrades modestly with decreasing pressure and increasing O 2:TEOS flow ratio, but is nearly independent of absorbed microwave power. Step coverage degrades significantly with increasing temperature; for example, step coverage in a long rectangular trench of aspect ratio 2 is greater than 90 at 250°C, but less than 40 at 400°C at otherwise fixed conditions. We attribute this behavior to a thermally activated oxygen-atom recombination reaction on the growing silicon dioxide surface, that consumes reactive oxygen and leads to larger gradients in oxygen atom flux in the feature as temperature is increased.

AB - The dependences of silicon dioxide step coverage in micron-scale trenches on substrate temperature, total pressure, absorbed microwave power, and O 2:tetraethoxysilane (TEOS) flow ratio were investigated in a remote plasma configuration in which oxygen is excited upstream of the deposition chamber in a microwave glow discharge. Of the independent parameters investigated, temperature has the strongest effect on conformality. Conformality degrades modestly with decreasing pressure and increasing O 2:TEOS flow ratio, but is nearly independent of absorbed microwave power. Step coverage degrades significantly with increasing temperature; for example, step coverage in a long rectangular trench of aspect ratio 2 is greater than 90 at 250°C, but less than 40 at 400°C at otherwise fixed conditions. We attribute this behavior to a thermally activated oxygen-atom recombination reaction on the growing silicon dioxide surface, that consumes reactive oxygen and leads to larger gradients in oxygen atom flux in the feature as temperature is increased.

UR - http://www.scopus.com/inward/record.url?scp=21844510333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844510333&partnerID=8YFLogxK

U2 - 10.1116/1.579806

DO - 10.1116/1.579806

M3 - Article

AN - SCOPUS:21844510333

VL - 13

SP - 676

EP - 680

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -