Abstract

We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given - a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Original languageEnglish (US)
Article number113001
JournalSemiconductor Science and Technology
Volume31
Issue number11
DOIs
StatePublished - Oct 5 2016

Fingerprint

random access memory
Ions
Data storage equipment
filaments
ions
Electronics industry
Ionizing radiation
Solid electrolytes
Electrochemistry
Oxides
conduction
Electrolytes
thermal environments
primers
Metal ions
Cations
Physics
Activation energy
solid electrolytes
Positive ions

Keywords

  • CBRAM
  • ionic memory
  • resistive memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Conductive bridging random access memory - Materials, devices and applications. / Kozicki, Michael; Barnaby, Hugh.

In: Semiconductor Science and Technology, Vol. 31, No. 11, 113001, 05.10.2016.

Research output: Contribution to journalReview article

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