Conduction mechanism of TiNHfO xPt resistive switching memory: A trap-assisted-tunneling model

Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Contribution to journalArticlepeer-review

280 Scopus citations


The conduction mechanism of metal oxide resistive switching memory is debated in the literature. We measured the I-V characteristics below the switching voltages through TiNHfO xPt memory stack and found the conduction cannot be described by the commonly used Poole-Frenkel model, because the fitted dielectric constant and the trap energy are unreasonable as compared to their known values. Therefore, we provide an alternate viewpoint based on a trap-assisted-tunneling model. Agreement of the bias polaritytemperatureresistance state-dependent conduction behavior was achieved between this model and experimental data. And insights for the multilevel capability due to the control of tunneling distance were obtained.

Original languageEnglish (US)
Article number063507
JournalApplied Physics Letters
Issue number6
StatePublished - Aug 8 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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