Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

G. Lucovsky; J. G. Hong; C. C. Fulton; N. A. Stoute; Y. Zou; R. J. Nemanich; D. E. Aspnes; H. Ade; D. G. Schlom

doi:10.1016/j.microrel.2004.11.038

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

G. Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.

Original language	English (US)
Pages (from-to)	827-830
Number of pages	4
Journal	Microelectronics Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.038
State	Published - May 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2004.11.038

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title = "Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra",

abstract = "This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.",

author = "G. Lucovsky and Hong, {J. G.} and Fulton, {C. C.} and Stoute, {N. A.} and Y. Zou and Nemanich, {R. J.} and Aspnes, {D. E.} and H. Ade and Schlom, {D. G.}",

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doi = "10.1016/j.microrel.2004.11.038",

language = "English (US)",

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journal = "Microelectronics Reliability",

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AU - Lucovsky, G.

AU - Hong, J. G.

AU - Fulton, C. C.

AU - Stoute, N. A.

AU - Zou, Y.

AU - Nemanich, R. J.

AU - Aspnes, D. E.

AU - Ade, H.

AU - Schlom, D. G.

N1 - Funding Information: Supported by ONR, SRC and SRC/ISMT FEP.

PY - 2005/5

Y1 - 2005/5

N2 - This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.

AB - This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.

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Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

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ASJC Scopus subject areas

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