Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

G. Lucovsky, C. C. Fulton, Y. Zhang, J. Luning, L. Edge, J. L. Whitten, Robert Nemanich, D. G. Schlom, V. V. Afanase'V

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices.

Original languageEnglish (US)
Pages (from-to)129-135
Number of pages7
JournalThin Solid Films
Volume486
Issue number1-2
DOIs
StatePublished - Aug 22 2005
Externally publishedYes

Fingerprint

Core levels
Conduction bands
Oxides
Rare earths
Transition metals
conduction bands
Rare Earth Metals
rare earth elements
transition metals
Jahn-Teller effect
Silicates
Lanthanoid Series Elements
X ray absorption spectroscopy
MOS devices
oxides
Photoconductivity
Crystal symmetry
Photoemission
Electron transitions
Rare earth elements

Keywords

  • Band edge d-states
  • Bulk trapping
  • Complex oxides
  • Jahn-Teller term splittings
  • Localized band edge states
  • Transition metal/rare earth oxides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., ... Afanase'V, V. V. (2005). Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. Thin Solid Films, 486(1-2), 129-135. https://doi.org/10.1016/j.tsf.2004.11.233

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. / Lucovsky, G.; Fulton, C. C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J. L.; Nemanich, Robert; Schlom, D. G.; Afanase'V, V. V.

In: Thin Solid Films, Vol. 486, No. 1-2, 22.08.2005, p. 129-135.

Research output: Contribution to journalArticle

Lucovsky, G, Fulton, CC, Zhang, Y, Luning, J, Edge, L, Whitten, JL, Nemanich, R, Schlom, DG & Afanase'V, VV 2005, 'Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings', Thin Solid Films, vol. 486, no. 1-2, pp. 129-135. https://doi.org/10.1016/j.tsf.2004.11.233
Lucovsky G, Fulton CC, Zhang Y, Luning J, Edge L, Whitten JL et al. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. Thin Solid Films. 2005 Aug 22;486(1-2):129-135. https://doi.org/10.1016/j.tsf.2004.11.233
Lucovsky, G. ; Fulton, C. C. ; Zhang, Y. ; Luning, J. ; Edge, L. ; Whitten, J. L. ; Nemanich, Robert ; Schlom, D. G. ; Afanase'V, V. V. / Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. In: Thin Solid Films. 2005 ; Vol. 486, No. 1-2. pp. 129-135.
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