TY - JOUR
T1 - Conduction and transmission analysis in gold nanolayers embedded in zinc oxide for flexible electronics
AU - Sivaramakrishnan, K.
AU - Alford, Terry
N1 - Funding Information:
This work was partially supported by the National Science Foundation (Grant No. DMR-0902277, L. Hess), to whom the authors are greatly indebted. Research was sponsored by the Army Research Laboratory (ARL) and was accomplished under Cooperative Agreement No. W911NG-04-2-0005.
PY - 2010/5/17
Y1 - 2010/5/17
N2 - Gold-embedded zinc oxide structures are obtained in which the conduction mechanism changes from conduction through the oxide and activated tunneling between discontinuous metal islands to metallic conduction through a near-continuous layer, with increase in gold thickness. These structures can show resistivity as low as 5.2× 10-5 ω cm. Optical transmission is elucidated in terms of gold's absorption due to interband electronic transitions, and free carrier absorption losses combined with limitation of the mean free path in discontinuous nanoparticles. The structures show transmittance, photopic averaged transmittance, and Haacke figure of merit values of 93%, 84%, and 15.1× 10-3ω-1, respectively.
AB - Gold-embedded zinc oxide structures are obtained in which the conduction mechanism changes from conduction through the oxide and activated tunneling between discontinuous metal islands to metallic conduction through a near-continuous layer, with increase in gold thickness. These structures can show resistivity as low as 5.2× 10-5 ω cm. Optical transmission is elucidated in terms of gold's absorption due to interband electronic transitions, and free carrier absorption losses combined with limitation of the mean free path in discontinuous nanoparticles. The structures show transmittance, photopic averaged transmittance, and Haacke figure of merit values of 93%, 84%, and 15.1× 10-3ω-1, respectively.
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U2 - 10.1063/1.3435467
DO - 10.1063/1.3435467
M3 - Article
AN - SCOPUS:77953018492
SN - 0003-6951
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
M1 - 201109
ER -