Abstract
The study of high field transport in semiconductor devices has progressed very rapidly over the past decade, sustained in part by rapid technological advances in the solid state electronics industry. These have, however, generated important conceptual problems in modeling of high speed transport in nonlinear semiconductors. Some of these problems are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 540-544 |
| Number of pages | 5 |
| Journal | Journal of vacuum science & technology |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1 1981 |
| Event | Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981 |
ASJC Scopus subject areas
- Engineering(all)