CONCEPTUAL PROBLEMS IN MODELING SUBMICRON DEVICE PHYSICS.

H. L. Grubin, D. K. Ferry

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The study of high field transport in semiconductor devices has progressed very rapidly over the past decade, sustained in part by rapid technological advances in the solid state electronics industry. These have, however, generated important conceptual problems in modeling of high speed transport in nonlinear semiconductors. Some of these problems are discussed.

Original languageEnglish (US)
Pages (from-to)540-544
Number of pages5
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - Sep 1981
Externally publishedYes

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Electronics industry
Semiconductor devices
Physics
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

CONCEPTUAL PROBLEMS IN MODELING SUBMICRON DEVICE PHYSICS. / Grubin, H. L.; Ferry, D. K.

In: Journal of vacuum science & technology, Vol. 19, No. 3, 09.1981, p. 540-544.

Research output: Contribution to journal › Article

Grubin, HL & Ferry, DK 1981, 'CONCEPTUAL PROBLEMS IN MODELING SUBMICRON DEVICE PHYSICS.', Journal of vacuum science & technology, vol. 19, no. 3, pp. 540-544. https://doi.org/10.1116/1.571122
Grubin HL, Ferry DK. CONCEPTUAL PROBLEMS IN MODELING SUBMICRON DEVICE PHYSICS. Journal of vacuum science & technology. 1981 Sep;19(3):540-544. https://doi.org/10.1116/1.571122
Grubin, H. L. ; Ferry, D. K. / CONCEPTUAL PROBLEMS IN MODELING SUBMICRON DEVICE PHYSICS. In: Journal of vacuum science & technology. 1981 ; Vol. 19, No. 3. pp. 540-544.
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