Concentration dependent microstructure and transport properties of the magnetic semiconductor Gd-Si

E. Helgren, D. Queen, F. Hellman, L. Zeng, R. Islam, David Smith

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The transport properties and microstructure of amorphous Gdx Si1-x alloys are presented. The conductivity increases from x=0 through the metal-insulator transition (x=14 at. %), up to a dopant concentration of 25 at. %. A sharp cusp in the magnitude of the conductivity is then observed and the flattening of the conductivity versus temperature curve occurs at higher concentrations. These transport results are explained in terms of high-resolution electron micrographs which demonstrate the formation of nano-crystallites at x25 at. %. The flattening of the conductivity versus the temperature curve is identical to the results for annealing of a -Gdx Si1-x alloys with a low Gd concentration.

Original languageEnglish (US)
Article number093712
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
StatePublished - 2007

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transport properties
conductivity
microstructure
flattening
curves
cusps
crystallites
low concentrations
insulators
annealing
temperature
high resolution
metals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Concentration dependent microstructure and transport properties of the magnetic semiconductor Gd-Si. / Helgren, E.; Queen, D.; Hellman, F.; Zeng, L.; Islam, R.; Smith, David.

In: Journal of Applied Physics, Vol. 101, No. 9, 093712, 2007.

Research output: Contribution to journalArticle

Helgren, E. ; Queen, D. ; Hellman, F. ; Zeng, L. ; Islam, R. ; Smith, David. / Concentration dependent microstructure and transport properties of the magnetic semiconductor Gd-Si. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 9.
@article{5d40f251378140889bc9f42dbab01283,
title = "Concentration dependent microstructure and transport properties of the magnetic semiconductor Gd-Si",
abstract = "The transport properties and microstructure of amorphous Gdx Si1-x alloys are presented. The conductivity increases from x=0 through the metal-insulator transition (x=14 at. {\%}), up to a dopant concentration of 25 at. {\%}. A sharp cusp in the magnitude of the conductivity is then observed and the flattening of the conductivity versus temperature curve occurs at higher concentrations. These transport results are explained in terms of high-resolution electron micrographs which demonstrate the formation of nano-crystallites at x25 at. {\%}. The flattening of the conductivity versus the temperature curve is identical to the results for annealing of a -Gdx Si1-x alloys with a low Gd concentration.",
author = "E. Helgren and D. Queen and F. Hellman and L. Zeng and R. Islam and David Smith",
year = "2007",
doi = "10.1063/1.2727446",
language = "English (US)",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Concentration dependent microstructure and transport properties of the magnetic semiconductor Gd-Si

AU - Helgren, E.

AU - Queen, D.

AU - Hellman, F.

AU - Zeng, L.

AU - Islam, R.

AU - Smith, David

PY - 2007

Y1 - 2007

N2 - The transport properties and microstructure of amorphous Gdx Si1-x alloys are presented. The conductivity increases from x=0 through the metal-insulator transition (x=14 at. %), up to a dopant concentration of 25 at. %. A sharp cusp in the magnitude of the conductivity is then observed and the flattening of the conductivity versus temperature curve occurs at higher concentrations. These transport results are explained in terms of high-resolution electron micrographs which demonstrate the formation of nano-crystallites at x25 at. %. The flattening of the conductivity versus the temperature curve is identical to the results for annealing of a -Gdx Si1-x alloys with a low Gd concentration.

AB - The transport properties and microstructure of amorphous Gdx Si1-x alloys are presented. The conductivity increases from x=0 through the metal-insulator transition (x=14 at. %), up to a dopant concentration of 25 at. %. A sharp cusp in the magnitude of the conductivity is then observed and the flattening of the conductivity versus temperature curve occurs at higher concentrations. These transport results are explained in terms of high-resolution electron micrographs which demonstrate the formation of nano-crystallites at x25 at. %. The flattening of the conductivity versus the temperature curve is identical to the results for annealing of a -Gdx Si1-x alloys with a low Gd concentration.

UR - http://www.scopus.com/inward/record.url?scp=34248563481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248563481&partnerID=8YFLogxK

U2 - 10.1063/1.2727446

DO - 10.1063/1.2727446

M3 - Article

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 093712

ER -