We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry