Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements

E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Goltsman, A. A. Verevkin, A. I. Toropov, P. Mauskopf

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Abstract

We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Original languageEnglish (US)
Article number025013
JournalSemiconductor Science and Technology
Volume26
Issue number2
DOIs
StatePublished - Feb 1 2011
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Goltsman, G. N., Verevkin, A. A., Toropov, A. I., & Mauskopf, P. (2011). Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements. Semiconductor Science and Technology, 26(2), [025013]. https://doi.org/10.1088/0268-1242/26/2/025013