Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements

E. L. Shangina; K. V. Smirnov; D. V. Morozov; V. V. Kovalyuk; G. N. Goltsman; A. A. Verevkin; A. I. Toropov; P. Mauskopf

doi:10.1088/0268-1242/26/2/025013

Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements

E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Goltsman, A. A. Verevkin, A. I. Toropov, P. Mauskopf

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Abstract

We present measurements of the energy relaxation time, τ _ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τ_ε α n ^γ_s with γ = 0.40 ± 0.02 for values of the carrier density, n_s, from 1.6 × 10¹¹ to 6.6 × 10¹¹cm^-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Original language	English (US)
Article number	025013
Journal	Semiconductor Science and Technology
Volume	26
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/26/2/025013
State	Published - Feb 1 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements",

abstract = "We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.",

author = "Shangina, {E. L.} and Smirnov, {K. V.} and Morozov, {D. V.} and Kovalyuk, {V. V.} and Goltsman, {G. N.} and Verevkin, {A. A.} and Toropov, {A. I.} and P. Mauskopf",

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T1 - Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions

T2 - Direct measurements

AU - Shangina, E. L.

AU - Smirnov, K. V.

AU - Morozov, D. V.

AU - Kovalyuk, V. V.

AU - Goltsman, G. N.

AU - Verevkin, A. A.

AU - Toropov, A. I.

AU - Mauskopf, P.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

AB - We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

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Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: Direct measurements

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