Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions

Direct measurements

E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Goltsman, A. A. Verevkin, A. I. Toropov, Philip Mauskopf

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present measurements of the energy relaxation time, τ ε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε α n γ s with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm-2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Original languageEnglish (US)
Article number025013
JournalSemiconductor Science and Technology
Volume26
Issue number2
DOIs
StatePublished - Feb 2011
Externally publishedYes

Fingerprint

Relaxation time
aluminum gallium arsenides
Heterojunctions
heterojunctions
relaxation time
Carrier concentration
electron gas
Electron gas
Joule heating
Two dimensional electron gas
Phonons
energy
Energy dissipation
phonons
energy dissipation
Acoustics
Microwaves
Spectroscopy
Scattering
microwaves

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions : Direct measurements. / Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, Philip.

In: Semiconductor Science and Technology, Vol. 26, No. 2, 025013, 02.2011.

Research output: Contribution to journalArticle

Shangina, E. L. ; Smirnov, K. V. ; Morozov, D. V. ; Kovalyuk, V. V. ; Goltsman, G. N. ; Verevkin, A. A. ; Toropov, A. I. ; Mauskopf, Philip. / Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions : Direct measurements. In: Semiconductor Science and Technology. 2011 ; Vol. 26, No. 2.
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AU - Goltsman, G. N.

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