Computer simulations of dense-branching patterns

J. Erlebacher, P. C. Searson, Karl Sieradzki

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We present a novel Monte Carlo simulation of electrochemical deposition that shows a smooth transition between diffusion limited aggregation and dense-branching morphology. The essential element of the simulation is to divide the growth field into two areas, a ''space charge'' region surrounding the aggregate in which particle motion is biased to branch tips, and a second region surrounding the first in which particle motion follows unbiased random walks. The interface between these areas is stable to perturbations of wavelength smaller than the size of the space charge region.

Original languageEnglish (US)
Pages (from-to)3311-3314
Number of pages4
JournalPhysical Review Letters
Volume71
Issue number20
DOIs
StatePublished - 1993
Externally publishedYes

Fingerprint

particle motion
space charge
computerized simulation
random walk
simulation
perturbation
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Computer simulations of dense-branching patterns. / Erlebacher, J.; Searson, P. C.; Sieradzki, Karl.

In: Physical Review Letters, Vol. 71, No. 20, 1993, p. 3311-3314.

Research output: Contribution to journalArticle

Erlebacher, J. ; Searson, P. C. ; Sieradzki, Karl. / Computer simulations of dense-branching patterns. In: Physical Review Letters. 1993 ; Vol. 71, No. 20. pp. 3311-3314.
@article{18fb80da18df4243ad0b2917df0e04ad,
title = "Computer simulations of dense-branching patterns",
abstract = "We present a novel Monte Carlo simulation of electrochemical deposition that shows a smooth transition between diffusion limited aggregation and dense-branching morphology. The essential element of the simulation is to divide the growth field into two areas, a ''space charge'' region surrounding the aggregate in which particle motion is biased to branch tips, and a second region surrounding the first in which particle motion follows unbiased random walks. The interface between these areas is stable to perturbations of wavelength smaller than the size of the space charge region.",
author = "J. Erlebacher and Searson, {P. C.} and Karl Sieradzki",
year = "1993",
doi = "10.1103/PhysRevLett.71.3311",
language = "English (US)",
volume = "71",
pages = "3311--3314",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "20",

}

TY - JOUR

T1 - Computer simulations of dense-branching patterns

AU - Erlebacher, J.

AU - Searson, P. C.

AU - Sieradzki, Karl

PY - 1993

Y1 - 1993

N2 - We present a novel Monte Carlo simulation of electrochemical deposition that shows a smooth transition between diffusion limited aggregation and dense-branching morphology. The essential element of the simulation is to divide the growth field into two areas, a ''space charge'' region surrounding the aggregate in which particle motion is biased to branch tips, and a second region surrounding the first in which particle motion follows unbiased random walks. The interface between these areas is stable to perturbations of wavelength smaller than the size of the space charge region.

AB - We present a novel Monte Carlo simulation of electrochemical deposition that shows a smooth transition between diffusion limited aggregation and dense-branching morphology. The essential element of the simulation is to divide the growth field into two areas, a ''space charge'' region surrounding the aggregate in which particle motion is biased to branch tips, and a second region surrounding the first in which particle motion follows unbiased random walks. The interface between these areas is stable to perturbations of wavelength smaller than the size of the space charge region.

UR - http://www.scopus.com/inward/record.url?scp=4043088558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043088558&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.71.3311

DO - 10.1103/PhysRevLett.71.3311

M3 - Article

AN - SCOPUS:4043088558

VL - 71

SP - 3311

EP - 3314

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 20

ER -